Process for making super-thin silicon nitride / silicon oxide grid electrode dielectric layer

Abstract

The invention discloses a process for manufacturing ultra-thin silicon nitride / silicon oxide grid electrode dielectric layer, characterized by that, first forming a surface oxidation layer on a silicon substrate by silicon oxidation, then depositing silicon nitride layer on the surface oxidation layer, and nitrogenizing and oxidizing the silicon nitride using plasma body. The thermal oxidation silicon substrate is carried out by oxidizing the silicon substrate using oxygen or N#-[2]O, so as to form silicon oxide layer or silicon nitride layer. The deposition silicon nitride uses rapid heating chemical vapor deposition or remote plasma body to reinforce the chemical vapor deposition silicon nitride layer. Plasma body nitridation uses N#-[2] plasma body, and plasma body oxidation uses oxygen plasma body or N#-[2] plasma body to oxidizing the silicon nitride layer.

Description

technical field [0001] The invention relates to a method for manufacturing an integrated circuit gate dielectric layer, in particular to a method for manufacturing an ultra-thin silicon nitride / silicon oxide gate dielectric layer. Background technique [0002] As the size of integrated circuits shrinks to the deep submicron range, the need for gate oxide reliability becomes more and more urgent. This is because as the thickness of the gate oxide gradually shrinks, it rapidly approaches its limit due to high leakage currents induced by electron tunneling. Under the 0.1 micron technology, the thickness of the gate oxide layer must be reduced, and thinning the thickness of the gate dielectric layer is an effective method to control the short channel effect under the reduced gate width. The shrinking dimensions of integrated circuit components have increased the need for gate dielectrics with higher dielectric constants (compared to silicon dioxide). Such a requirement is extr...

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Problems solved by technology

Such an operation can reduce the defect density of the film, but the intensive annealing treatment not only increases the complexity and instability of the process, but also causes a high process thermal budget (Thermal Budget), and causes the impurities in the substrate to diffuse and cause component damage degradation of characteristics

In addition, multiple annealing processes of temperature rise and fall also increase the complexity and instability of the entire process.

Furthermore, the ammonia nitridation process will cause a large amount of hydrogen to enter the gate dielectric layer, degrading the reliability of the device

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