Polycrystalline silicon ingot squaring size adjustable ingot platform and using method

A polycrystalline silicon ingot, adjustable technology, applied in the direction of manufacturing tools, fine working devices, working accessories, etc., to achieve the effect of improving flexibility, increasing processing range, and improving cutting quality

Pending Publication Date: 2021-12-03
YICHANG CSG POLYSILICON CO LTD +1
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the technical problems existing in the background technology, the present invention provides an adjustable polycrystalline silicon ingot squaring size ingot table and its use method. The device changes the fixed crystal ingot table into a grid structure, which solves the problem of the traditional The ingot table can only process silicon block defects of a single size, and the device also adds a cooling fluid flow space at the bottom of the ingot table, which can effectively reduce the frequency and difficulty of manual removal of silicon powder, improve work efficiency and improve the cutting of crystalline silicon. quality

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polycrystalline silicon ingot squaring size adjustable ingot platform and using method
  • Polycrystalline silicon ingot squaring size adjustable ingot platform and using method
  • Polycrystalline silicon ingot squaring size adjustable ingot platform and using method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment example 1

[0032] Implementation case 1: The single side length of a polysilicon block is 200mm, and the single processing quantity is 49 polysilicon blocks:

[0033] Step 1: Open installation holes 101 on the adjustment base plate 1, the distance between the installation holes 101 is set to 30mm, and the distance between the centers of the longitudinal holes and the centers of the transverse holes of the installation holes 101 is equal.

[0034] Step 2: In order to prevent the silicon powder generated during the subsequent cutting of the polysilicon ingot 4 from clogging the installation hole 101, a layer of plastic film should be laid on the surface of the adjustment base plate 1 after the opening of the hole is completed.

[0035] Step 3: According to the size of the polysilicon ingot 4 to be cut, take the installation hole 101 at the center of the adjustment base plate 1 as the symmetrical center, and arrange the crystal adjustment bases 3 in a matrix of 7*7 on the adjustment base pla...

Embodiment example 2

[0040] Implementation case 2: Production of polysilicon blocks with a single side length of 300 mm and a single processing quantity of 36 polysilicon blocks:

[0041] Step 1: Open installation holes 101 on the adjustment base plate 1, the distance between the installation holes 101 is set to 30mm, and the center distance between the longitudinal holes and the transverse holes of the installation holes 101 is equal.

[0042] Step 2: In order to prevent the silicon powder generated during the subsequent cutting of the polysilicon ingot 4 from clogging the installation hole 101, a layer of plastic film should be laid on the surface of the adjustment base plate 1 after the opening of the hole is completed.

[0043] Step 3: According to the size of the polysilicon ingot 4 to be cut, take the installation hole 101 at the center of the adjustment base plate 1 as the symmetrical center, and let the crystal adjustment base 3 be arranged in a matrix of 6*6 on the adjustment base plate 1,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a polycrystalline silicon ingot squaring size adjustable ingot platform and a using method. The polycrystalline silicon ingot squaring size adjustable ingot platform comprises an adjusting bottom plate, crystal adjusting bases and rim charge protection plates; mounting holes are arranged on the adjusting bottom plate; the crystal adjusting bases are arranged in the mounting holes; and the rim charge protection plates are arranged on the peripheries of the crystal adjusting bases. The using method comprises the following steps when the device is used: the mounting holes are uniformly arranged on the adjusting bottom plate, the crystal adjusting bases are mounted in the mounting holes and are arranged in a matrix manner, the rim charge protection plates are inserted in the peripheries of the crystal adjusting bases, and polycrystalline silicon ingots to be cut are placed on the inner sides of the rim charge protection plates and the upper ends of the crystal adjusting bases and are cut by diamond wires. A fixed ingot platform is changed into a grid structure, the defect that a traditional squarer ingot platform can only machine silicon blocks of a single size is overcome, the frequency and difficulty of manually removing silicon powder can be effectively reduced, and the cutting quality of crystalline silicon is improved while the working efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of cutting polycrystalline silicon ingots, in particular to an ingot table with adjustable square dimensions of polycrystalline silicon ingots and a use method thereof. Background technique [0002] In the production industry of semiconductor polycrystalline silicon ingots, a single silicon ingot with a length and width of about 1m is usually first cast by a polycrystalline ingot furnace, and then processed and cut into 36 / 49 / 64 pieces by a diamond wire squarer. Small crystal ingots with side width, in the process of silicon ingot squaring, due to the continuous development of industry technology, large-size silicon wafers have become the development direction of the industry. In the later stage of silicon ingot cutting, different ingot sizes will be processed to meet different requirements. Customer demand. [0003] In the existing polysilicon square cutting machine, the supporting ingot table is usually c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B28D7/04B28D7/02B28D5/04
CPCB28D5/0082B28D5/045B28D5/0076
Inventor 刘群锋吕渊博赵永恒何其兵陈发勤
Owner YICHANG CSG POLYSILICON CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap