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Organoaminodisilazanes for high temperature atomic layer deposition of silicon oxide thin films

A technology of organoaminodisilazane and pentamethyldisilazane, which is applied in the field of a method for depositing silicon oxide, and can solve problems such as harmful semiconductor applications

Pending Publication Date: 2021-12-03
VERSUM MATERIALS US LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, silicon dioxide (SiO2) deposited at low temperature using these processes 2 ) may contain levels of impurities such as carbon (C), nitrogen (N), or both, which are detrimental to semiconductor applications

Method used

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  • Organoaminodisilazanes for high temperature atomic layer deposition of silicon oxide thin films
  • Organoaminodisilazanes for high temperature atomic layer deposition of silicon oxide thin films
  • Organoaminodisilazanes for high temperature atomic layer deposition of silicon oxide thin films

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0116] Example 1: Preparation of 1-dimethylamino-1,1,2,3,3,3-hexamethyldisilazane.

[0117] Dimethyldichlorosilane (1.13 mol, 146 g) was added to heptamethyldisilazane (1.13 mol, 198 g) in a 1 L flask via an addition funnel. The mixture was stirred and heated to about 60°C. Upon completion of the reaction as determined by GC analysis, the reaction mixture was distilled. 157 g of 1-chloro-1,1,2,3,3,3-hexamethyldisilazane were obtained under reduced pressure (68° C. / 25 torr) with a yield of 71%.

[0118] Dimethylamine solution (2M) in THF (1.0mol, 500mL) was slowly added to 1-chloro-1,1,2,3,3,3-hexamethyldisilazane (0.67mol, 131g ), triethylamine (0.80mol, 81g) and hexane in a mixture. Once the addition was complete, the resulting slurry was stirred and then heated at about 50°C for 2 hours. The mixture was filtered, and the solvent was removed under reduced pressure, and the crude product was purified by distillation to give 93.0 g (b.p. 185° C.) of 1-dimethylamino-1,1,2,3,...

Embodiment 3

[0127] Example 3. Precursor thermal stability of 1-dimethylamino-1,1,2,3,3,3-hexamethyldisilazane vs DMATMS

[0128] 1-Dimethylamino-1,1,2,3,3,3-hexamethyldisilazane and DMATMS were introduced into the ALD chamber as silicon precursors in the following steps: (a) introduction of silicon precursor 12 seconds; (b) purged with nitrogen. Repeat steps (a) and (b) for 300 cycles. Film thickness and refractive index (RI) were measured using a FilmTek 2000SE ellipsometer by fitting reflection data from the film to a preset physical model (eg, a Lorentz oscillator model). Table 4 summarizes the films formed by thermal deposition of silazane precursors at substrate temperatures of 600 °C and 650 °C, respectively, showing that 1-dimethylamino-1,1,2,3,3,3-hexamethyl Disilazane decomposes slightly less than DMATMS, and therefore it is a better precursor for high temperature ALD applications.

[0129] Table 4 Thermal decomposition of silazane precursors vs DMATMS

[0130]

Embodiment 4

[0131] Example 4. Atomic layer deposition of silicon oxide films using 1-dimethylamino-1,1,2,3,3,3-hexamethyldisilazane

[0132] Atomic layer deposition of silicon oxide films was performed using the following silicon precursor: 1-dimethylamino-1,1,2,3,3,3-hexamethyldisilazane. Deposition was performed on a laboratory-scale ALD processing facility. The silicon precursor is delivered into the chamber by vapor pumping. The deposition process and parameters are provided in Table 2. Repeat steps 2 to 6 for 500 cycles until the desired thickness is achieved. Table 5 provides the deposition process parameters, deposition rate, refractive index, and WER using a 1% solution of 49% hydrofluoric (HF) acid in deionized water.

[0133] Table 5. Summary of process parameters and results for 1-dimethylamino-1,1,2,3,3,3-hexamethyldisilazane

[0134]

[0135] It can be seen that the silicon precursor 1-dimethylamino-1,1,2,3,3,3-hexamethyldisilazane provides a slightly higher deposition...

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Abstract

An atomic layer deposition (ALD) process for formation of silicon oxide at a temperature greater than 500 DEG C is performed using at least one organoaminodisilazane precursor having the following Formula I: wherein R1 and R2 are each independently selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group with a proviso that R1 and R2 cannot be both hydrogen; R3 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group; and either R1 and R2 are linked to form a cyclic ring structure or R1 and R2 are not linked to form a cyclic ring structure.

Description

[0001] This application claims the benefit of U.S. Application No. 62 / 838,854, filed April 25, 2019. The disclosure of that application Ser. No. 62 / 838,854 is hereby incorporated by reference. Background technique [0002] Compositions and methods for forming silicon oxide films are described herein. More specifically, described herein are compositions and methods for forming silicon oxide films at one or more deposition temperatures of about 500° C. or higher and using an atomic layer deposition (ALD) process. [0003] Thermal oxidation is commonly used in semiconductor applications to deposit high-purity and highly conformal silicon oxide films such as silicon dioxide (SiO 2 ))Methods. However, thermal oxidation methods have very low deposition rates, e.g., below 700 °C This makes it impractical for high-volume manufacturing processes (see, eg, Wolf, S., "Silicon Processing for the VLSI Era Vol. 1 - Process Technology", Lattice Press, CA, 1986). [0004] Atomic layer de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/40
CPCC23C16/45553C23C16/401C07F7/10C23C16/402C01B33/126C01P2006/10C01P2006/80C23C16/4408C23C16/45536
Inventor 雷新建李明M·R·麦克唐纳王美良
Owner VERSUM MATERIALS US LLC
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