Photosensitive element
A technology of photosensitive element and filter layer, which is applied in electrical elements, electric solid-state devices, semiconductor devices, etc., can solve the problems of miniaturization limitation of pixel unit area, reduction of chip sensitivity, parasitic sensitivity, etc.
Pending Publication Date: 2021-12-07
UNITED MICROELECTRONICS CORP
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Problems solved by technology
In the above process, part of the light will be blocked, reflected or absorbed by the internal wiring structure layer, resulting in the reduction of chip sensitivity or crosstalk noise.
The back-illuminated CIS receives light from the back of the chip (the back of the substrate). Although it can avoid the interference of the interconnection structure layer on the light, it still has the problem of parasitic lightsensitivity caused by light scattering on the substrate.
[0004] On the other hand, the photodiodes of the existing front-illuminated CIS and back-illuminated CIS are all formed in the substrate. In order to maintain a sufficient photosensitive area, there will be restrictions on the miniaturization of the pixel unit area.
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[0044] The following detailed description and description, with reference to the content shown in the relevant drawings, are used together to illustrate embodiments that can be implemented according to the present invention. These embodiments provide sufficient details to enable those skilled in the art to fully understand and practice the present invention. Structural, logical and electrical changes may be made and applied to other embodiments without departing from the scope of the present invention.
[0045] In this specification, "wafer", "substrate" or "substrate" refers to any structure, such as a wiring layer, that includes an exposed surface on which materials can be deposited to form integrated circuit structures according to embodiments of the present invention. It is understood that "substrate" includes semiconductor wafers, but is not limited thereto. "Substrate" in the fabrication process also means a semiconductor structure including layers of material fabricate...
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Abstract
A photosensitive element disclosed by the present invention includes an integrated circuit structure, a first pad and a second pad exposed from a surface of the integrated circuit structure, a first material layer is disposed on the surface and covers the first pad, and a second material layer is disposed on the first material layer and covers the second pad, wherein the first material layer and the second material layer form a photodiode.
Description
technical field [0001] The invention relates to a photosensitive element and a manufacturing method thereof, in particular to a complementary metal oxide semiconductor transistor image sensor (CMOS image sensor, CIS) and a manufacturing method thereof. Background technique [0002] Complementary metal-oxide-semiconductor transistor image sensor (CMOS image sensor, CIS) is compatible with the manufacturing process of complementary metal-oxide-semiconductor transistors, so the image sensor and its required peripheral circuits can be integrated and manufactured on the same chip, which can Significantly reducing the cost and power consumption of image sensors is now widely used in many consumer and professional applications. [0003] Existing CISs include front side illumination (FSI) and back side illumination (BSI) architectures. The CIS with the front-illuminated structure receives light through the front side of the chip (the front side of the substrate), and the light pass...
Claims
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IPC IPC(8): H01L27/146
CPCH01L27/14643H01L27/14603H01L27/14683H01L27/1461H01L27/14634H01L27/14636H01L27/14665H01L27/14621H01L27/14627H01L27/14623
Inventor 詹兆尧丁乾威蒋晓宏戴锦华
Owner UNITED MICROELECTRONICS CORP