Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

SiC MOSFET device and preparation method thereof

A device and trench technology, which is applied in the field of SiC MOSFET devices and its preparation, can solve problems such as gate oxide breakdown, achieve high breakdown voltage, simple preparation method, and reduce on-resistance and on-power consumption.

Pending Publication Date: 2021-12-07
深圳真茂佳半导体有限公司
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problem of premature breakdown of the gate oxide of trench-type SiC MOSFET devices and improve the reliability of trench-type SiC MOSFET devices, the application provides a SiC MOSFET device and its preparation method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • SiC MOSFET device and preparation method thereof
  • SiC MOSFET device and preparation method thereof
  • SiC MOSFET device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0090] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments for understanding the inventive concepts of the present application, and cannot represent All the embodiments are not explained as the only embodiment. Based on the embodiments in the present application, all other embodiments obtained by persons of ordinary skill in the art on the premise of understanding the inventive concepts of the present application fall within the protection scope of the present application.

[0091] It should be noted that if there is a directional indication (such as up, down, left, right, front, back...) in the embodiment of the present application, the directional indication is only used to explain the relationship between the components in a certain posture. If the s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to the field of silicon carbide power devices, and discloses a SiC MOSFET device and a preparation method thereof, and the SiC MOSFET device comprises a substrate, an epitaxial bottom layer, a base layer, a source electrode layer, a grid electrode, a grid dielectric layer, a channel section, a channel length reduction section, a floating section, an isolation layer, a source electrode and a drain electrode. The SiC MOSFET device is prepared based on the following method: forming an epitaxial bottom layer and a base layer on a first surface of a substrate, forming a source layer and a base junction on the base layer, forming a gate, a gate dielectric layer, a channel section, a channel length reduction section and a floating section in a trench, forming an isolation layer on the gate layer, and forming a source on the isolation layer and the source layer, and forming a drain electrode on the second surface of the substrate. The gate dielectric layer is low in defect density, high in breakdown voltage and high in reliability.

Description

technical field [0001] The present application relates to the field of silicon carbide power devices, in particular to a SiC MOSFET device and a preparation method thereof. Background technique [0002] Because of its large band gap, high thermal conductivity, high breakdown field strength, high electron saturation rate and strong radiation resistance, silicon carbide power semiconductor devices can be used in high temperature, high pressure, high frequency and strong radiation working environments Down. [0003] Vertical MOSFETs mainly include planar double-injection MOSFETs and trench MOSFETs. Among them, the trench MOSFET device has no JFET area resistance and has a higher cell density, so it is considered to have a wider application prospect. [0004] However, in a trench MOSFET, the gate oxide is directly exposed to the drift region, and the electric field is concentrated at the corner of the gate oxide. The dielectric constant of SiC is SiO 2 2.5 times the dielectr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/10H01L29/16H01L29/423H01L21/336H01L29/78
CPCH01L29/0615H01L29/1033H01L29/1608H01L29/4236H01L29/66068H01L29/7827
Inventor 任炜强春山正光谢文华杨正友
Owner 深圳真茂佳半导体有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com