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Wafer processing method

A processing method and wafer technology, which can be used in the manufacture of conveyor objects, electrical components, semiconductor/solid-state devices, etc. Sensitivity and other issues to achieve the effect of increasing process cost, improving hydrophilicity, and avoiding silicon loss

Pending Publication Date: 2021-12-10
HUA HONG SEMICON WUXI LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, BARC is sensitive to the hydrophilicity of the surface of the film layer, and the silicon nitride film has strong hydrophobicity and poor hydrophilicity, and the problem of uneven coating is prone to occur when coating BARC

Method used

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  • Wafer processing method

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Embodiment Construction

[0021] The technical solutions in this application will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0022] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a specific orientati...

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Abstract

The invention discloses a wafer processing method, and relates to the field of semiconductor manufacturing. The wafer processing method comprises the following steps: setting a loading area environment of a vertical furnace tube machine table as an oxygen-containing environment; transmitting the wafer to a vertical furnace tube machine; forming a silicon nitride film on the wafer through the vertical furnace tube machine; and transmitting the wafer on which the silicon nitride film is formed to a loading area. The problem that the existing silicon nitride film is poor in hydrophilicity, and BARC coating is not uniform easily is solved. Under the condition that the process cost is not increased, the hydrophilicity of the surface of the silicon nitride film is improved, and the silicon loss caused by bubbles formed on the substrate during photoetching is avoided.

Description

technical field [0001] The present application relates to the field of semiconductor manufacturing, in particular to a wafer processing method. Background technique [0002] The vertical furnace tube machine is one of the important process equipment in the semiconductor manufacturing production line, which can be used for diffusion, oxidation, annealing, chemical vapor deposition, Alloy and other processes. Send each batch (lot) into the reaction chamber of the vertical furnace tube machine through the crystal boat to carry out the corresponding process. [0003] In some chip manufacturing processes, a silicon nitride film is deposited by a vertical furnace tube machine, and photolithography is performed after the silicon nitride film is formed. In the photolithography process, a bottom anti-reflection coating (Bottom Anti-Reflection Coating, BARC) needs to be coated on the surface of the silicon nitride film. However, BARC is sensitive to the hydrophilicity of the surfac...

Claims

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Application Information

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IPC IPC(8): H01L21/033H01L21/677
CPCH01L21/0335H01L21/677
Inventor 王瑞瀚张宾杨德明
Owner HUA HONG SEMICON WUXI LTD
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