Gold field plate-free GaN-based radio frequency device and manufacturing method thereof

Abstract

The invention discloses a gold field plate-free GaN-based radio frequency device and a manufacturing method thereof. The device comprises a substrate, a nucleating layer, a buffer layer, a channel layer, a barrier layer, a source electrode, a gate electrode, a drain electrode, a passivation layer and a source field plate, the nucleating layer, the buffer layer, the channel layer and the barrier layer are sequentially located at one side of the substrate, and the source electrode, the gate electrode, the drain electrode, the passivation layer and the source field plate are located at the side, away from the substrate, of the barrier layer. The source electrode and the drain electrode are oppositely arranged at the two sides of the first surface of the barrier layer, and the gate electrode is located between the source electrode and the drain electrode; the passivation layer covers the surface, away from the barrier layer, of the gate electrode and makes contact with the source electrode, the drain electrode and the first surface; the orthographic projection of the groove is located between the gate electrode and the drain electrode in the direction perpendicular to the plane where the substrate is located; and at least part of the source field plate is located in the groove, and the source field plate is electrically connected with the source electrode. By introducing the groove source field plate structure, the breakdown voltage of the GaN-based radio frequency device can be improved and the current collapse effect can be inhibited under the condition of generating the same parasitic capacitance.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a GaN-based radio frequency device without a gold field plate and a manufacturing method thereof. Background technique [0002] In order to meet the needs of higher frequency and power electronic devices, the third-generation semiconductor materials represented by GaN are widely used in the manufacture of microwave and millimeter wave devices. [0003] GaN is a new type of wide bandgap compound semiconductor material, which has excellent characteristics that many silicon-based semiconductor materials do not have, such as wide bandgap width, high breakdown electric field, high thermal conductivity, corrosion resistance, radiation resistance, etc. With the breakthrough of P-type doping technology and the introduction of nucleation layer technology, GaN materials have been developed rapidly. GaN materials can form AlGaN / GaN heterostructures, which not only can ob...

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Problems solved by technology

However, although the gate field plate can reduce the strong electric field at the edge of the gate leakage, it will increase the gate-drain feedback capacitance and reduce the device frequency; at the same time, since the source field plate is on a dielectric layer thicker than the height of the gate Extending between the gate and drain to reduce the strong electric field on the gate-drain side, this design will increase the source-drain capacitance, but the negative impact is less than the gate field plate

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