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Drying treatment method and apparatus using same

A technology of drying treatment and treatment chamber, which is applied in the direction of drying solid materials, heating to dry solid materials, drying, etc., can solve the problems of long time and low processing capacity, and achieves the improvement of contact area, efficiency and generation efficiency. Effect

Inactive Publication Date: 2004-02-11
TOKYO ELECTRON LTD
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  • Abstract
  • Description
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Problems solved by technology

However, this will result in the need to provide a very small amount of N to the chamber 2 Gas, and it takes more time and low processing capacity, etc., there is no specific solution to these problems

Method used

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  • Drying treatment method and apparatus using same
  • Drying treatment method and apparatus using same
  • Drying treatment method and apparatus using same

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Embodiment Construction

[0037]Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. These embodiments are applicable to semiconductor wafer cleaning processing systems.

[0038] figure 1 is a schematic plan view of an example of a cleaning treatment system applicable to the drying treatment device of the present invention, figure 2 Is the side schematic diagram of the above cleaning system.

[0039] The above-mentioned cleaning processing system is mainly composed of a container for a semiconductor wafer W (hereinafter simply referred to as a wafer) that is accommodated in a horizontal state, such as a transport part 2 that is transported into or out of a carrier 1; The processing part 3 for cleaning liquid and other liquid processing and drying processing at the same time; the interface part 4 provided between the conveying part 2 and the processing part 3 for wafer transfer, position adjustment and posture change, etc. constitutes.

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Abstract

A drying processing apparatus for supplying a dry gas to a processing chamber, which houses therein semiconductor wafers W, to dry the semiconductor wafers, comprises: a heater 32 for heating N2 gas serving as a carrier gas; a vapor generator 34 for making IPA misty by using the N2 gas heated by the heater 32 and for heating the IPA to produce said dry gas. Thus, it is possible to improve the efficiency of heat transfer of the carrier gas, and it is possible to increase the amount of produced IPA gas and decrease the time to produce IPA gas. In addition, it is possible to prevent the turbulence of atmosphere in the processing chamber after the drying processing is completed.

Description

technical field [0001] The present invention relates to a method and an apparatus for drying an object to be processed such as a semiconductor wafer or a glass substrate for a liquid crystal display (LCD) by contacting with a drying gas. Background technique [0002] In general, in the manufacturing process of semiconductor manufacturing, the process of sequentially immersing a processing object such as a semiconductor wafer or glass for LCD (hereinafter referred to as a crystal) in a processing liquid such as a storage chemical liquid or a rinse liquid (cleaning liquid) is widely used. A cleaning treatment method in which the tank is treated for cleaning. In addition, this cleaning treatment device is provided with a drying treatment device, in which the surface of the crystal after cleaning is contacted with a dry gas composed of a volatile solvent vapor such as IPA (isopropanol). , A drying treatment device that condenses or adsorbs the vapor of the drying gas to remove ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/304H01L21/00H01L21/08
CPCH01L21/67034H01L21/08
Inventor 小美野光明内泽修
Owner TOKYO ELECTRON LTD
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