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Device and process for preparing ultrahigh-purity hydrogen chloride gas for semiconductors

A hydrogen chloride gas and preparation process technology, applied in the direction of chlorine/hydrogen chloride, chlorine/hydrogen chloride purification, inorganic chemistry, etc., can solve the problems of heavy metal solid hazardous waste, limited raw material selection, complicated process flow, etc., and achieve industrial application with small limitations, The effect of a wide range of materials and low prices

Pending Publication Date: 2021-12-21
湖北和远气体股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The object of the present invention is to provide a preparation device and process for ultra-high-purity hydrogen chloride gas used in semiconductors, using industrial product gas as raw material, using a combination of polymer permeable membrane, metal cation exchange resin, rare earth metal compound dehydration and high-pressure rectification , in order to solve the limitations of raw material selection existing in the existing process, complex process flow and technical problems such as waste acid, waste water, heavy metal solid hazardous waste, etc.

Method used

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  • Device and process for preparing ultrahigh-purity hydrogen chloride gas for semiconductors
  • Device and process for preparing ultrahigh-purity hydrogen chloride gas for semiconductors

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] S1. Industrial hydrogen chloride gas is dewatered by the first purifier 3 to below 1ppm, compressed to liquefaction, and light fractions are obtained through the first rectification tower 4; the pressure of the first rectification tower 4 is 4.0MPa, and the temperature at the top of the tower is controlled at 12°C, the temperature of the tower kettle is controlled at 15°C;

[0053] S2. The light fraction at the top of the first rectification tower 4 enters the first gas-liquid separator 6 after passing through the first condenser 5, and the obtained liquid phase enters the second purifier 7 for second water removal;

[0054] S3. The gas after the second water removal enters the second rectification tower 8 for further rectification, and the heavy components in the tower reactor are purified by the third purifier 11 and the fourth purifier 12 to obtain ultra-high-purity hydrogen chloride gas; The second rectification tower 8 overhead components are completely refluxed af...

Embodiment 2

[0056] Using the same industrial hydrogen chloride gas as in Example 1, the purification method and steps are the same as in Example 1, except that the condition of the first rectifying tower 4 is 4.6MPa, the temperature at the top of the tower is 16°C, and the temperature at the bottom of the tower is 21°C; The pressure of the secondary rectification tower 8 is 4.4 MPa, the temperature at the top of the tower is 15° C., and the temperature at the bottom of the tower is 19° C.

Embodiment 3

[0058] Using the same industrial hydrogen chloride gas as in Example 1, the purification method and steps are the same as in Example 1, except that the pressure of the first rectifying tower 4 is 6.0MPa, the temperature at the top of the tower is 25°C, and the temperature at the bottom of the tower is 30°C; The pressure of the second rectification column 8 is 5.5 MPa, the temperature at the top of the column is 22°C, and the temperature at the bottom of the column is 27°C.

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Abstract

The invention discloses a device and a process for preparing ultrahigh-purity hydrogen chloride gas for semiconductors, industrial product gas is used as a raw material, and CO2 impurities in components can be removed to 0.1 ppm or below and metal ion content can be removed to 10 ppt or below by combining high-molecular permeable membrane, metal cation exchange resin and rare-earth metal compound dehydration with high-pressure rectification; the preparation process gets rid of dependence on raw materials in the prior art, hydrogen chloride gases with various qualities are produced while ultra-pure hydrogen chloride gas is produced, tail gas is reduced and easy to treat, and the preparation process is suitable for industrial popularization.

Description

technical field [0001] The invention relates to the technical field of ultra-high-purity gas preparation, in particular to a preparation device and process for ultra-high-purity hydrogen chloride gas used in semiconductors. Background technique [0002] With the development of the semiconductor electronics manufacturing industry, the purity requirements for ultra-high-purity gases for semiconductor manufacturing (hereinafter referred to as semiconductor electronics gases) are getting higher and higher. Total hydrocarbons (THC), H 2 O.CO 2 The lower the content of impurities such as metal ions and metal ions, the better. At the same time, the market demand for semiconductor electronic gases is also increasing day by day. But at present, the domestic semiconductor electronic gas market mainly relies on imports, and the localization of 6-7N ultra-high-purity semiconductor electronic gas is imminent. [0003] Chinese patent document CN107848798A describes a method for produci...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B7/07
CPCC01B7/0706C01B7/0712C01B7/0718
Inventor 杜大艳曹小林吴祥虎
Owner 湖北和远气体股份有限公司
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