Insulating film for manufacturing electronic device
A technology of electronic devices and insulating films, applied in printed circuits, electrical components, synthetic resin layered products, etc., can solve the problems of printed circuit board bending or warping, unbalanced physical properties and thermal expansion coefficient, waste printed circuit boards, etc. Achieves the effect of preventing bending or warping and excellent flexibility
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Embodiment 1
[0061] (1) Preparation of insulating film composition
[0062] The viscosity of 40 parts by weight is the liquid epoxy resin of 2500cps to 2800cps (preparation company: KUKDO chemical company, product name: KDS8161), 40 parts by weight of solid epoxy resin of 40 parts by weight (preparation company: NIPPON KAYAKU company, product name : NC-3000), 20 parts by weight of phenoxy resin (manufacturing company: Gabriel company, product name: PKHH), 4 parts by weight of acrylonitrile-butadiene rubber (manufacturing company: ZEON company, product name: NIPOL 1072CGX) After stirring with 50 parts by weight of solvent naphtha, it was dissolved by heating. After cooling the above mixture at room temperature, mix 40 parts by weight of curing agent (preparation company: DIC company, product name: LA-7052), 0.1 parts by weight of imidazole curing accelerator (preparation company: SHIKOKU company, product name: 2E4MZ ), 120 parts by weight of spherical silica (manufacturing company: ADMATEC, ...
Embodiment 2
[0068] In addition to using 120 parts by weight of spherical silica (manufacturing company: ADMATEC, product name: SC-2050MNS) with an average particle size of 0.5 μm that uses aminosilane to treat the surface instead of the composition of the insulating film in Example 1 above In addition to the spherical silica on the surface treated with epoxy silane during the process, an insulating film and a silicon wafer substrate attached with the above insulating film were prepared in the same manner as in Example 1.
Embodiment 3
[0070] Except that the content of the curing agent in the preparation process of the insulating film composition of the above-mentioned embodiment 1 is adjusted to 30 parts by weight, and the content of spherical silica with an average particle size of 0.5 μm is adjusted to 110 parts by weight, in accordance with the implementation The same method as in Example 1 was used to prepare an insulating film and a silicon wafer substrate with the above insulating film attached thereto.
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