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A gallium nitride transistor drive control circuit, method, device, and medium

A drive control circuit, drive control technology, applied in the direction of control/regulation systems, electronic switches, electrical components, etc., can solve the problems of device burnout, misleading, and inability to solve GaN direct drive, etc., to avoid false activation, The effect of improving reliability

Active Publication Date: 2022-02-25
ZHUHAI ISMARTWARE TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, many flyback PWM controllers simply change the driving voltage to 6V to drive GaN transistors, but this is far from solving other problems of GaN direct drive
For the flyback PWM controller with peak current mode control, the source of the GaN transistor needs to be connected to the current detection resistor for peak current control, and due to the leakage inductance of the flyback high-frequency transformer, after the GaN transistor is turned off , high-frequency oscillations will occur between the drain-source parasitic capacitance of the GaN transistor and the leakage inductance of the flyback high-frequency transformer, the package parasitic inductance of the GaN transistor, and the parasitic inductance of the PCB trace. This high-frequency oscillation will cause nitrogen The source voltage of the GaN transistor oscillates to about -1V, which causes false conduction and burns out the device

Method used

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  • A gallium nitride transistor drive control circuit, method, device, and medium
  • A gallium nitride transistor drive control circuit, method, device, and medium
  • A gallium nitride transistor drive control circuit, method, device, and medium

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Embodiment 1

[0033] Traditional PWM controllers are mainly used to drive silicon MOS devices, and their driving voltage is usually 12V, but the driving voltage requirement of GaN transistors is 6V, so traditional PWM controllers are no longer suitable for driving GaN transistors. At present, many flyback PWM controllers simply change the driving voltage to 6V to drive GaN transistors, such as figure 1 As shown, it is a schematic diagram of the first drive circuit used to drive gallium nitride transistors in the prior art. The first drive circuit changes the output voltage of the Driver pin to 6V on the basis of the existing flyback power supply circuit. But this is far from being able to solve other problems of GaN direct drive. After the GaN transistor is turned off, high-frequency oscillations will occur between the drain-source parasitic capacitance of the GaN transistor and the leakage inductance of the flyback high-frequency transformer, the package parasitic inductance of the GaN tra...

Embodiment 2

[0054] This embodiment is used to provide a driving control method for a gallium nitride transistor, and the driving control method includes:

[0055] In each drive control cycle of the GaN transistor, the following operations are performed:

[0056] Control the Driver pin of the control chip to output a high level, and the ADriver pin to output a low level, until the voltage of the CS pin of the control chip reaches a preset limit value, control the Driver pin to output a low level, so The ADriver pin outputs a low level; after delaying the first dead zone time, the Driver pin is controlled to output a low level, and the ADriver pin is output to a high level until the first preset moment is reached, and the ADriver pin is controlled to output a high level. The Driver pin outputs a low level, and the ADriver pin outputs a low level; after a delay of the second dead time, the next drive control cycle is entered.

[0057] Wherein, until the voltage of the CS pin of the control ...

Embodiment 3

[0063] This embodiment is used to provide a driving control device for GaN transistors, including:

[0064] processor; and

[0065] a memory in which computer readable program instructions are stored,

[0066] Wherein, the driving control method as described in Embodiment 1 is executed when the computer-readable program instructions are executed by the processor.

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Abstract

The present invention relates to a driving control circuit, method, device and medium of a gallium nitride transistor. An ADriver pin and an electronic switch are added to the existing flyback power supply circuit, and the first end of the electronic switch is connected to the ADriver pin. The second end is connected between the drive resistor and the GaN transistor, and the third end is connected between the current sense resistor and the CS pin. By improving the driving control circuit and driving control method of GaN transistors, it is possible to effectively avoid false turn-on problems caused by transformer leakage inductance and parasitic capacitance high-frequency oscillations after GaN transistors are turned off, and improve the driving of GaN transistors. reliability.

Description

technical field [0001] The present invention relates to the technical field of power electronics, in particular to a driving control circuit, method, device and medium of a gallium nitride transistor. Background technique [0002] With the advancement of power electronics technology and various semiconductor materials, power converters are also developing towards high power density and high conversion efficiency, especially in the field of consumer electronics. In the era of traditional silicon transistors, the switching frequency of power converters is usually tens of thousands to one or two hundred kilohertz. With the development of the third-generation wide bandgap semiconductors, especially with low on-resistance and extremely low parasitic capacitance With the application of gallium nitride transistors, the switching frequency of power converters has been increased to hundreds of kilohertz or even several megahertz. Since the threshold voltage between the gate and sour...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/38H02M3/335H03K17/16H03K17/56
CPCH02M1/38H02M3/33523H03K17/16H03K17/56Y02B70/10H02M1/36H02M1/0009H02M1/08H02M3/33507
Inventor 陈海鹏
Owner ZHUHAI ISMARTWARE TECH CO LTD