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Epitaxial structure with P-type buffer layer and preparation method thereof

A technology of epitaxial structure and buffer layer, which is applied in the direction of chemical instruments and methods, semiconductor/solid-state device manufacturing, crystal growth, etc., to achieve the effect of reducing resistivity and good transition

Inactive Publication Date: 2022-01-11
EPIWORLD INT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The present invention aims to provide an epitaxial structure with a P-type buffer layer to solve the problem that Shockley stacking faults in existing substrates extend into the epitaxial layer

Method used

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  • Epitaxial structure with P-type buffer layer and preparation method thereof
  • Epitaxial structure with P-type buffer layer and preparation method thereof
  • Epitaxial structure with P-type buffer layer and preparation method thereof

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preparation example Construction

[0034] The above-mentioned epitaxial structure with a P-type buffer layer can be prepared by the following preparation method, which specifically includes the following steps:

[0035] Step 1. Put the silicon carbide substrate into a reaction chamber filled with a hydrogen atmosphere. The reaction chamber has an initial pressure, and the reaction chamber is heated up to reach the initial temperature; the initial pressure is 800mbar-1200mbar, and the initial temperature is 500-900°C.

[0036] Step 2. Inject hydrogen gas into the reaction chamber to etch the silicon carbide substrate; the flow rate of hydrogen gas is 60-150slm, the temperature of the reaction chamber is 1550-1700°C, the pressure is 50-300mbar, and the etching time is 1-30min . At the same time, hydrogen chloride gas can also be introduced during the etching process to adjust the etching rate, and the flow rate of hydrogen chloride is 0-1000 sccm.

[0037] Step 3, heating the reaction chamber, continuing to feed...

Embodiment 1

[0040] Step 1. Place the silicon carbide substrate in a transfer chamber filled with argon, and use a mechanical arm to transfer it to a silicon carbide CVD reaction chamber in a hydrogen atmosphere. The initial pressure of the reaction chamber is 1100mbar, and the initial temperature is 700°C.

[0041] Step 2. Keep feeding hydrogen into the reaction chamber. The hydrogen flow rate is 100slm. Set the temperature of the reaction chamber to 1600°C and the pressure to 150mbar. After the temperature and pressure of the reaction chamber gradually reach the set value and become stable, maintain it for 15 minutes to The substrate is pre-etched.

[0042] Step 3: Start the growth of the P-type buffer layer intentionally doped with N elements, and the growth conditions are as follows:

[0043] a. The reaction chamber temperature is 1600°C, the hydrogen flow rate is 80slm, and the reaction chamber pressure is 150mbar; meanwhile, the reaction chamber temperature, hydrogen flow rate and re...

Embodiment 2

[0050] Step 1. Place the silicon carbide substrate in a transfer chamber filled with argon, and use a mechanical arm to transfer it to a silicon carbide CVD reaction chamber in a hydrogen atmosphere. The initial pressure of the reaction chamber is 800mbar, and the initial temperature is 500°C.

[0051] Step 2. Keep feeding hydrogen gas 1 into the reaction chamber. The flow rate of hydrogen gas is 100slm. Set the temperature of the reaction chamber to 1650°C and the pressure to 120mbar, and feed 15 sccm of hydrogen chloride gas until the temperature and pressure of the reaction chamber gradually reach the set value. And after stabilization, maintain for 30 minutes to perform pre-etching treatment on the substrate.

[0052] Step 3, start the growth of the P-type buffer layer intentionally doped with N elements, and the growth conditions are as follows:

[0053] a. The reaction chamber temperature is 1600° C., the hydrogen flow rate is 60 slm, and the reaction chamber pressure is...

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Abstract

The invention relates to an epitaxial structure with a P-type buffer layer and a preparation method thereof, the P-type buffer layer intentionally doped with an N element exists between a 4H-SiC substrate and an epitaxial layer so as to solve the problem that Porcley stacks in the existing substrate extend into the epitaxial layer in a staggered manner.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to an epitaxial structure with a P-type buffer layer and a preparation method thereof. Background technique [0002] Bipolar 4H-SiC devices will appear "bipolar degeneration" phenomenon during use, that is, the forward voltage will gradually increase. Similarly, for MOSFETs transistors made of 4H-SiC, when the current flows through its internal PN junction, there is also a phenomenon of "bipolar degradation". Therefore, solving the degradation phenomenon in bipolar devices and MOSFETs transistors has become an urgent problem. [0003] The phenomenon of "bipolar degeneration" is caused by the propagation of Shockley stacking faults (SF) in the transistor, and the propagation of stacking faults is caused by the slip of basal plane dislocations (BPD). Therefore, converting basal plane dislocations into screw dislocations in the substrate is considered to be an effective...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/18C30B28/14C30B25/16C30B29/40H01L21/02H01L29/06
CPCC30B25/18C30B25/186C30B28/14C30B25/16C30B29/403H01L29/0684H01L21/02378H01L21/02447H01L21/02529H01L21/0262
Inventor 黄海林钱卫宁冯淦赵建辉刘杰梁瑞
Owner EPIWORLD INT
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