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Extreme ultraviolet lithography machine material detection device and test method

A technology of extreme ultraviolet lithography and detection devices, which is applied in the direction of measuring devices, analytical materials, instruments, etc., can solve the problems of inconvenient operation of extreme ultraviolet vacuum systems, achieve easy disassembly and measurement, improve reliability, and simple device structure Effect

Pending Publication Date: 2022-01-14
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

[0004] The purpose of the present invention is to at least solve the problem of inconvenient operation of existing extreme ultraviolet vacuum systems

Method used

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  • Extreme ultraviolet lithography machine material detection device and test method
  • Extreme ultraviolet lithography machine material detection device and test method
  • Extreme ultraviolet lithography machine material detection device and test method

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Embodiment Construction

[0040] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0041] It should be understood that the terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" may also be meant to include the plural forms unless the context clearly dictates otherwise. The terms "comprising", "comprising", "containing" and "having" are inclusive and thus indicate the presence of stated...

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Abstract

The invention belongs to the technical field of extreme ultraviolet lithography machines, and particularly relates to an extreme ultraviolet lithography machine material detection device, a hydrogen-induced deflation test method and a hydrogen damage performance test method. The extreme ultraviolet lithography machine material detection device comprises a vacuum container, an emptying assembly, a hydrogen supply assembly, a discharge assembly and a detection assembly, wherein the emptying assembly is communicated with the vacuum container, the hydrogen supply assembly is communicated with the vacuum container, and the discharge assembly comprises a radio frequency generator, a first electrode and a second electrode. The first electrode and the second electrode are oppositely arranged in the vacuum container, the detection assembly is communicated with the interior of the vacuum container, and the detection assembly is used for detecting vacuum pressure of the vacuum container, parameters of plasmas generated in the vacuum container, components of gases in the vacuum container and partial pressure of each gas. According to the technical scheme, the material detection device of the extreme ultraviolet lithography machine is simple in structure and convenient to disassemble, assemble and measure.

Description

technical field [0001] The invention belongs to the technical field of extreme ultraviolet lithography machines, and in particular relates to a material detection device for extreme ultraviolet lithography machines, a hydrogen-induced outgassing test method, and a hydrogen damage performance test method. Background technique [0002] Extreme ultraviolet (EUV) lithography technology is the next generation of lithography machine technology after 193nm immersion lithography technology. The vacuum system of the extreme ultraviolet lithography machine generally needs to introduce a moderate clean mixed air flow to take away the pollutants generated during the exposure of the lithography machine. The common clean air flow is hydrogen, nitrogen, argon, etc., and the dynamic ambient pressure is Pa level low vacuum. The extreme ultraviolet lithography machine uses extreme ultraviolet light with a wavelength of 13.5nm, which has a strong single-photon energy of 91.9 electron volts. I...

Claims

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Application Information

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IPC IPC(8): G01N33/00G01D21/02
CPCG01N33/00G01D21/02
Inventor 罗艳吴晓斌王魁波韩晓泉谢婉露沙鹏飞李慧
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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