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Preparation method of lithium niobate crystal domain structure and photoelectric device

A technology for optoelectronic devices, lithium niobate, applied in crystal growth, chemical instruments and methods, single crystal growth, etc., can solve the high requirements of processing technology, polarization conditions, etc., difficult to prepare PPLN structure, difficult to accurately control domain structure period problems such as sexual conditions, to achieve the effect of low sample structure requirements

Active Publication Date: 2022-01-18
NANKAI UNIV
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Problems solved by technology

Due to the constraints of crystal symmetry, this method is often difficult to prepare domain structures of arbitrary shapes, and the preparation process is cumbersome.
At the same time, there will be a lateral broadening effect during the polarization process, it is difficult to accurately control the periodic conditions of the domain structure, and the requirements for processing technology and polarization conditions are high. Therefore, it is difficult to prepare a PPLN structure with a period of submicron order.
Although the electric field polarization of the conductive probe tip can improve the above existing problems to a certain extent, this method is only applicable to Z-cut lithium niobate single crystal crystals, and the bottom electrode needs to be added

Method used

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  • Preparation method of lithium niobate crystal domain structure and photoelectric device
  • Preparation method of lithium niobate crystal domain structure and photoelectric device
  • Preparation method of lithium niobate crystal domain structure and photoelectric device

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preparation example Construction

[0050] One aspect of the present invention provides a method for preparing a lithium niobate crystal domain structure, comprising the following steps:

[0051] Scanning the surface of the lithium niobate crystal with a voltage-applied conductive probe to form a domain structure, wherein the electric field strength formed by the conductive probe on the surface of the lithium niobate crystal is greater than or equal to the threshold electric field strength for polarization reversal of the lithium niobate crystal;

[0052] When a positive pressure is applied to the conductive probe, the scanning direction of the conductive probe is the same as the spontaneous polarization direction of the lithium niobate crystal;

[0053] When a negative pressure is applied to the conductive probe, the scanning direction of the conductive probe is opposite to the spontaneous polarization direction of the lithium niobate crystal;

[0054] Lithium niobate crystals are non-polar X-tangential or non-...

Embodiment 1

[0067] Embodiment 1 Preparation method of lithium niobate single crystal thin film domain structure

[0068] Such as figure 1 and figure 2 as shown, figure 1 (a) is a schematic diagram of the scanning direction of the domain structure prepared on the surface of the X-tangential lithium niobate single crystal film using a conductive probe after positive pressure; figure 1 (b) is a schematic diagram of the scanning direction of the domain structure prepared on the surface of the X-tangential lithium niobate single crystal film using a conductive probe after negative pressure (wherein P s is the spontaneous polarization intensity vector of lithium niobate crystal).

[0069] Place the X-tangential lithium niobate single crystal thin film on the sample stage of the atomic force microscope device, apply a voltage of 150V to the conductive probe of the atomic force microscope, and make the scanning direction of the conductive probe coincide with the X-tangential lithium niobate s...

Embodiment 2

[0070] Embodiment 2 Preparation method of lithium niobate single crystal thin film domain structure

[0071] The method for preparing the domain structure of lithium niobate single crystal thin film in Example 2 is basically the same as that in Example 1, except that a voltage of -150V is applied to the conductive probe. Specific steps are as follows:

[0072] Place the X-tangential lithium niobate single crystal thin film on the sample stage of the atomic force microscope device, apply a voltage of -150V to the conductive probe of the atomic force microscope, and make the scanning direction of the conductive probe coincide with the X-tangential lithium niobate single crystal thin film The spontaneous polarization direction is opposite, and the domain structure is prepared on the X-tangential lithium niobate single crystal film at a scanning speed of 80 μm / s. The obtained domain structure is as follows Figure 5 Shown in the middle dark area (black area). That is, at a volta...

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Abstract

The invention relates to the technical field of ferroelectric domain preparation, in particular to a preparation method of a lithium niobate crystal domain structure and a photoelectric device. The preparation method of the lithium niobate crystal domain structure comprises the following steps: scanning the surface of the lithium niobate crystal by using a conductive probe on which voltage is applied to form the domain structure, wherein the electric field intensity of the conductive probe formed on the surface of the lithium niobate crystal is greater than or equal to the threshold electric field intensity of polarization inversion of the lithium niobate crystal; and the lithium niobate crystal is a non-polar X-tangential crystal or a non-polar Y-tangential crystal. The preparation method provided by the invention has no requirement on the sample structure, does not need a bottom electrode, and can be used for preparing a complete domain structure with any pattern. The invention also provides a photoelectric device comprising the lithium niobate crystal domain structure prepared by the preparation method.

Description

technical field [0001] The invention relates to the technical field of ferroelectric domain preparation, in particular to a method for preparing a lithium niobate crystal domain structure and a photoelectric device. Background technique [0002] Due to the characteristics of ferroelectric polarity, ferroelectric materials can be in a multi-domain state, and the interface between adjacent domains is called domain wall. Lithium niobate is a typical ferroelectric material, which has excellent characteristics in the acousto-optic effect, nonlinear optical effect and electro-optic effect, and is called "photonics silicon". As a material platform for preparing photonic devices such as optical waveguides and optical microcavities, lithium niobate crystals have important application prospects in the integration of next-generation optoelectronic chips. Lithium niobate crystal is one of the ferroelectric materials with the highest spontaneous polarization at room temperature, and its...

Claims

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Application Information

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IPC IPC(8): C30B33/04C30B29/30
CPCC30B33/04C30B29/30
Inventor 张国权钱月照张子晴许京军
Owner NANKAI UNIV
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