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Preparation method of high-SERS-intensity Ag/SiO2 co-sputtering single-layer film

A co-sputtering, single-layer film technology, used in sputtering, coating, Raman scattering, etc., can solve the problems of insufficient sensitivity and measurement speed, limited SERS strength of single-layer metal film, etc., to improve the SERS strength. Effect

Pending Publication Date: 2022-01-28
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Its enhancement factor can be as high as 1014 to 1015 times, which is enough to detect the Raman signal of a single molecule, which is not enough for the sensitivity and measurement speed of traditional Raman
[0005] At present, the most commonly used metals are gold and silver, but the SERS strength of a single-layer metal film is limited, and its test range and size have great limitations.

Method used

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  • Preparation method of high-SERS-intensity Ag/SiO2 co-sputtering single-layer film
  • Preparation method of high-SERS-intensity Ag/SiO2 co-sputtering single-layer film
  • Preparation method of high-SERS-intensity Ag/SiO2 co-sputtering single-layer film

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Effect test

Embodiment 1

[0028] (1) Hydrophilic treatment of silicon wafers: place the cleaned silicon wafers in a beaker, add ammonia water, hydrogen peroxide and deionized water to the mixed solution, in the mixed solution, the volume of ammonia water, hydrogen peroxide and deionized water The ratio is 1:2:6, keep boiling for 10-15 minutes after boiling, pour out the mixed solution after cooling, and use deionized water and absolute ethanol to repeatedly ultrasonicate the silicon wafer for 10 minutes; the silicon wafer after cleaning is made by the following steps Obtained: Soak clean silicon wafers in deionized water and absolute ethanol respectively, and ultrasonically treat them.

[0029] (2) Preparation of Ag / SiO 2 Co-sputtering single-layer film: tilt the silver target and silicon dioxide target at 40° respectively, and sputter to the silicon wafer at the same time to generate Ag / SiO on the surface of the silicon wafer 2 Co-sputtered monolayer film; the background pressure before starting is 4...

Embodiment 2

[0033] (1) Hydrophilic treatment of silicon wafers: place the cleaned silicon wafers in a beaker, add ammonia water, hydrogen peroxide and deionized water to the mixed solution, in the mixed solution, the volume of ammonia water, hydrogen peroxide and deionized water The ratio is 1:2:6, keep boiling for 10-15 minutes after boiling, pour out the mixed solution after cooling, and use deionized water and absolute ethanol to repeatedly ultrasonicate the silicon wafer for 12 minutes; the silicon wafer after cleaning is made by the following steps Obtained: Soak clean silicon wafers in deionized water and absolute ethanol respectively, and ultrasonically treat them.

[0034] (2) Preparation of Ag / SiO 2 Co-sputtering single-layer film: tilt the silver target and silicon dioxide target at 40° respectively, and sputter to the silicon wafer at the same time to generate Ag / SiO on the surface of the silicon wafer 2 Co-sputtered monolayer film; the background pressure before starting is 4...

Embodiment 3

[0038](1) Hydrophilic treatment of silicon wafers: place the cleaned silicon wafers in a beaker, add ammonia water, hydrogen peroxide and deionized water to the mixed solution, in the mixed solution, the volume of ammonia water, hydrogen peroxide and deionized water The ratio is 1:2:6. After boiling, keep boiling for 10-15 minutes. After cooling, pour out the mixed solution, and use deionized water and absolute ethanol to repeatedly sonicate the silicon wafer for 15 minutes; the silicon wafer after cleaning is prepared by the following steps: Obtained: Soak clean silicon wafers in deionized water and absolute ethanol respectively, and ultrasonically treat them.

[0039] (2) Preparation of Ag / SiO 2 Co-sputtering single-layer film: tilt the silver target and silicon dioxide target at 40° respectively, and sputter to the silicon wafer at the same time to generate Ag / SiO on the surface of the silicon wafer 2 Co-sputtered monolayer film; the background pressure before starting is ...

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Abstract

The invention discloses a preparation method of a high-SERS-intensity Ag / SiO2 co-sputtering single-layer film. The preparation method comprises the following steps: (1) carrying out hydrophilic treatment on a silicon wafer; (2) preparing the Ag / SiO2 co-sputtering single-layer film; and (3) corroding the Ag / SiO2 co-sputtering single-layer film by using hydrofluoric acid to obtain the high-SERS-intensity Ag / SiO2 co-sputtering single-layer film. The metal-insulator co-sputtering film (Ag / SiO2) capable of realizing a higher SERS enhancement effect than a single-layer metal film is designed and prepared, and relatively simple magnetron sputtering is adopted, so that silicon dioxide in the Ag / SiO2 co-sputtering film is corroded to different degrees by utilizing the corrosivity of hydrofluoric acid to silicon dioxide, therefore, the silver nanoparticles with different particle sizes and intervals are left, and the SERS intensity of a single-layer film is improved.

Description

technical field [0001] The invention relates to the technical field of nanometer material preparation, in particular to a method for preparing an Ag / SiO2 co-sputtering single-layer film with high SERS strength. Background technique [0002] Magnetron sputtering, chemical reaction and other technologies can be used to improve the defects of the low SERS intensity of the single-layer metal film to varying degrees. The preparation is simple and controllable, the cost is low, and it can be mounted on other structures with good transferability. [0003] Magnetron sputtering is a type of physical vapor deposition (Physical Vapor Deposition, PVD). The general sputtering method can be used to prepare multiple materials such as metals, semiconductors, and insulators, and has the advantages of simple equipment, easy control, large coating area and strong adhesion. Its working principle is that under the action of the electric field E, the electrons collide with the argon atoms in the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/10C23C14/16C23C14/34G01N21/65
CPCC23C14/10C23C14/165C23C14/3464G01N21/658Y02P70/50
Inventor 赵晓宇梁龙杰温嘉红张永军钟家松张鉴孔哲王雅新
Owner HANGZHOU DIANZI UNIV
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