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Full-control type power semiconductor module power circulation method based on electric power working condition

A power semiconductor and module power technology, which is applied in the direction of electrical digital data processing, CAD numerical modeling, special data processing applications, etc., can solve the problems of bus voltage stress applied to devices, load fluctuations not considered, device junction temperature rise, etc. To achieve the effect of increasing the scope of application

Pending Publication Date: 2022-01-28
XI AN JIAOTONG UNIV
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  • Application Information

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Problems solved by technology

[0004] 1) The existing technology is mainly divided into DC power cycle test and AC power cycle test. In the DC power cycle test, since the device is in the normally-on state, the module has no switching loss, and the rise of the device junction temperature is only caused by the conduction loss. On the one hand, it will cause the stress on the bonding wire to be different from the actual one. On the other hand, the bus voltage stress and gate stress are not applied to the device. In addition, the change of load and ambient temperature is not considered.
[0005] 2) The existing AC power cycle test scheme imposes busbar voltage stress and gate stress on the device, but most of them do not take into account the fluctuation of the load in the actual working condition. The power cycle based on the actual working condition proposed in the latest research results In the scheme, only the junction temperature fluctuation in the actual working condition is considered in the power cycle test. However, the case temperature fluctuation of the power semiconductor module will affect the aging of the solder layer of the module substrate, which is not considered in the latest research results. to this point

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  • Full-control type power semiconductor module power circulation method based on electric power working condition
  • Full-control type power semiconductor module power circulation method based on electric power working condition
  • Full-control type power semiconductor module power circulation method based on electric power working condition

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Embodiment Construction

[0057] The present invention is described in further detail below:

[0058] The present invention provides a power cycle method for power semiconductor modules based on power conditions. The power conditions refer to the voltage, current, and temperature information of the power semiconductor module when it is working. The power cycle test refers to the intermittent flow of current through the module chip to generate intermittent heating power. A test method that causes temperature fluctuations in the device.

[0059] The power cycle test of the present invention adopts a single-phase bridge PWM inverter circuit, unipolar modulation, and outputs an alternating sinusoidal current with a fixed frequency of 50 Hz. The topology is the same as the existing AC power cycle test method, the difference is that the working conditions imposed on the modules in the present invention are based on the actual working conditions of the modules, and a control scheme for the shell temperature i...

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Abstract

The invention discloses a full-control type power semiconductor module power circulation method based on an electric power working condition. The method comprises the following steps: firstly, determining an actual working condition, calculating junction temperature and shell temperature information, processing junction temperature and shell temperature data by adopting a rain flow counting method, then building a power circulation device model, carrying out temperature circulation pairing and optimization processing, generating an accelerated aging curve, and finally, calculating a test working condition and checking an effect. An application of the method is not limited by application occasions, and accelerated aging curves and test working conditions corresponding to different actual working conditions can be obtained.

Description

technical field [0001] The invention relates to the field of power semiconductor modules, in particular to a method for power circulation of a full-control power semiconductor module based on power working conditions. Background technique [0002] With the development of semiconductor technology, high-voltage and high-power power electronic devices are widely used in smart grids, new energy power generation, electric vehicles and other occasions. In these occasions, power electronic devices will face complex and harsh working conditions, such as different ambient temperatures and continuous changes in loads. Under such working conditions, power semiconductor modules are one of the main failure sources of power equipment. It is an important issue to study the reliability of power semiconductor modules and improve their lifespan. Power cycling tests are an important and effective method for evaluating the reliability performance of power semiconductor modules with respect to ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F30/398G06F111/10G06F119/08G06F119/14
CPCG06F30/398G06F2119/08G06F2111/10G06F2119/14
Inventor 王来利张缙王见鹏刘意
Owner XI AN JIAOTONG UNIV