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Integrally-formed vapor chamber and preparation method and application thereof

A vapor chamber and integrated technology, which is applied in the field of integrally formed vapor chamber and its preparation, can solve problems affecting the performance of the vapor chamber, poor sealing performance of the vapor chamber, and reduction of the effective condensation area, so as to improve environmental adaptability ability, reduced weight and thickness, high sealing and mechanical properties

Pending Publication Date: 2022-02-18
GUANGDONG MORION NANOTECHNOLOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Non-condensable gases are easy to form air locks, thereby reducing the effective condensation area, resulting in slow return speed and affecting heat dissipation efficiency
Moreover, the above-mentioned vapor chamber is usually assembled and welded by the upper shell and the lower shell, and the assembly and welding may easily lead to poor sealing performance of the vapor chamber and affect the performance of the vapor chamber
At the same time, the structure of the upper shell and the lower shell also makes it difficult for the vapor chamber to become light and thin

Method used

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  • Integrally-formed vapor chamber and preparation method and application thereof
  • Integrally-formed vapor chamber and preparation method and application thereof

Examples

Experimental program
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Embodiment approach

[0043] As an optional embodiment of the present invention, the fluid working medium includes any one or a combination of at least two of deionized water, ethanol or acetone.

[0044] According to the second aspect of the present invention, there is also provided a method for preparing the above integrally formed vapor chamber, comprising the following steps:

[0045] (a) providing a graphene substrate sheet;

[0046] (b) sealing around the graphene matrix plate;

[0047] Inject the fluid working substance into the interior of the graphene matrix plate through the injection port, and then evacuate the interior of the graphene matrix plate to form a vacuum cavity inside to hold the fluid working substance, and then seal the injection port , forming a graphene plate, thereby obtaining an integrally formed vapor chamber.

[0048] The present invention provides a method for preparing the above-mentioned integrally formed vapor chamber, first sealing the surroundings of the graphe...

Embodiment 1

[0064] This embodiment provides an integrally formed vapor chamber, including a graphene plate;

[0065] The graphene plate is sealed around, and a vacuum cavity is set inside the graphene plate, and a fluid working medium is contained in the vacuum cavity, and the fluid working medium is deionized water;

[0066] The graphene plate is made by integral molding of the graphene substrate plate.

[0067] The preparation method of the integrally formed vapor chamber provided in this embodiment, the schematic flow chart is as follows figure 1 shown, including the following steps:

[0068] (a) providing a graphene substrate sheet;

[0069] Graphite is oxidized and stripped into graphene oxide by chemical method, and then the graphene oxide is made into a slurry form, and the graphene oxide slurry is made into a graphene oxide plate through a coating machine, and the graphene oxide plate is first carbonized at 1000 °C , and then hot-pressed and reduced at 3000°C to obtain a graphe...

Embodiment 2

[0077] This embodiment provides an integrally formed vapor chamber, the specific structure of which is the same as that of Embodiment 1.

[0078] In the preparation method of the integrally formed vapor chamber provided in this example, except that the thickness of the graphene substrate plate in step (a) is 300 μm, other steps are the same as in Example 1.

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Abstract

The invention provides an integrally-formed vapor chamber as well as a preparation method and application thereof, and relates to the technical field of vapor chambers. The integrally-formed vapor chamber comprises a graphene plate, the periphery of the graphene plate is sealed, a vacuum cavity is formed in the graphene plate, a fluid working medium is contained in the vacuum cavity, and the graphene plate is manufactured through a graphene base plate in an integrally-formed mode; the vapor chamber is made of a graphene material, and compared with a traditional copper vapor chamber, the vapor chamber has the advantages that the weight and the thickness of the vapor chamber are greatly reduced, so that the vapor chamber is more suitable for the field of miniaturized, light and ultrathin heat dissipation; the chemical property of the graphene material is very stable, the corrosion risk of a copper vapor chamber is avoided, long-term working reliability is achieved, and the fluid working medium does not chemically react with the interior of the graphene plate, so that the problems of denaturation failure, corrosion and the like of the internal fluid working medium are avoided; and the vapor chamber is manufactured in an integrated forming mode, so that the vapor chamber has very high sealing performance and mechanical property.

Description

technical field [0001] The invention relates to the technical field of vapor chambers, in particular to an integrally formed vapor chamber and its preparation method and application. Background technique [0002] Vapor chamber is a plate-shaped heat transfer device capable of phase change heat transfer formed by injecting fluid working fluid into a near-vacuum cavity with a microstructure inside. The inside of the vapor chamber is a near-vacuum cavity structure, which is light in weight; it does not need external drive to save energy; its cavity is welded and sealed, and will not leak, which is safe and reliable; its heat transfer method is phase change heat transfer, High heat transfer coefficient; can carry out two-dimensional heat transfer, fast heat conduction speed, can quickly transfer and distribute heat from point heat sources on the heat dissipation surface; its external dimensions can be designed according to specific use occasions; LED can be directly packaged on ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): F28D15/04
CPCF28D15/046
Inventor 蔡金明高宇郝振亮吕鉴刘子坚
Owner GUANGDONG MORION NANOTECHNOLOGY CO LTD
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