Thin film packaging structure and preparation method thereof, light-emitting device and display device
A technology of thin-film packaging and light-emitting units, which is applied in the manufacture of electric solid-state devices, semiconductor devices, semiconductor/solid-state devices, etc., can solve problems such as package failure, material stress difference, poor adhesion, etc. Efforts to improve the effect of encapsulation
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[0034] The method for preparing the above-mentioned thin film encapsulation structure according to an embodiment of the present invention includes the following steps S1-S5:
[0035] S1. Forming a first inorganic barrier layer.
[0036] S2. Forming a first buffer layer on the first inorganic barrier layer.
[0037] S3. Forming a first organic barrier layer on the first buffer layer.
[0038] S4, forming a second buffer layer on the first organic barrier layer.
[0039] S5, forming a second inorganic barrier layer on the second buffer layer.
[0040] In a specific example, the first buffer layer and the second buffer layer are formed by chemical vapor deposition or physical vapor deposition.
[0041] In a specific example, the method for forming the first buffer layer or the second buffer layer includes the following steps: using SiH 4 , NH 3 and N 2 O is the raw material, and during the chemical vapor deposition process, the mass ratio of the first compound to the second...
Embodiment 1
[0052] Such as figure 1 As shown, the light emitting device 200 of this embodiment includes a flexible substrate 201 , a light emitting unit 202 and a thin film encapsulation structure 100 . The flexible substrate 201 is mainly made of polyimide film (PI) and its derivatives, and the light-emitting unit 202 is mainly made of hole injection material ink, hole transport ink material, light-emitting layer material ink, electron transport material ink and electron injection material. ink etc. The thin film encapsulation structure 100 is sequentially composed of a third inorganic barrier layer 160 , a first inorganic barrier layer 110 , a first buffer layer 120 , a first organic barrier layer 130 , a second buffer layer 140 and a second inorganic layer 150 . The first buffer layer 120 and the second buffer layer 140 generate silicon oxynitride (SiO2) by chemical vapor deposition or physical vapor deposition. x N y ), the deposition thickness is about 500nm ~ 1000nm, and a single...
Embodiment 2
[0062] Such as figure 1 As shown, the light emitting device 200 of this embodiment includes a flexible substrate 201 , a light emitting unit 202 and a thin film encapsulation structure 100 . The flexible substrate 201 is mainly made of polyimide film (PI) and its derivatives, and the light-emitting unit 202 is mainly made of hole injection material ink, hole transport ink material, light-emitting layer material ink, electron transport material ink and electron injection material. ink etc. The thin film encapsulation structure 100 is sequentially composed of a third inorganic barrier layer 160 , a first inorganic barrier layer 110 , a first buffer layer 120 , a first organic barrier layer 130 , a second buffer layer 140 and a second inorganic layer 150 . The first buffer layer 120 and the second buffer layer 140 generate silicon oxycarbide (SiO x C y ), the deposition thickness is about 500nm ~ 1000nm, and a single layer of silicon oxycarbide (SiO x C y ) film water vapor ...
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