Short-channel field effect transistor and manufacturing method thereof

Abstract

One or more embodiments of the invention provide a short-channel field effect transistor and a manufacturing method thereof. The short-channel field effect transistor can accurately control the channel length and is simple in control operation process. The method comprises the following steps: acquiring a first conductive substrate and a first conductive epitaxial layer, and depositing and generating an injection mask layer on the upper surface of the first conductive epitaxial layer; etching the injection mask layer to generate a mask window with an injection mask angle; second conductive ion implantation and first conductive ion implantation are sequentially carried out through the mask window, wherein the second conductive ions are vertically implanted, and the first conductive ions are symmetrically and obliquely implanted; a short channel is formed in the part, exceeding the first conductive doped region, of the second conductive doped region, and a source electrode, a grid electrode and a drain electrode are arranged on the basis of the short channel, so that the short-channel field effect transistor is formed. The short-channel field effect transistor is manufactured by using the manufacturing method.

Description

technical field [0001] One or more embodiments of this specification relate to the technical field of semiconductor device fabrication, and in particular to a short channel field effect transistor and a fabrication method thereof. Background technique [0002] Silicon carbide metal oxide semiconductor field effect transistor (SiC MOSFET) has the characteristics of low on-resistance, fast switching speed, high temperature resistance, etc., and has great application advantages in high-voltage frequency conversion, new energy vehicles, rail transit and other fields. In order to increase the current density of MOSFET, effectively controlling and shortening the channel length of the device has become one of the main research directions. [0003] In the existing methods of controlling and shortening the channel length of SiC MOSFET, the sidewall after polysilicon oxidation is mostly used as the injection barrier layer to control the channel. The area range of the conductive doped ...

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Problems solved by technology

[0004] In view of this, the purpose of one or more embodiments of this specification is to propose a short channel field effect transistor and its manufacturing method to solve the problems of low channel length control accuracy and complicated control operation process in field effect transistor production

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