[0055] In order to make the objects, technical solutions and advantages of the present disclosure, the present disclosure will be described in detail below with reference to the accompanying drawings.
[0056] It should be noted that the technical terms or scientific terms used in one or more embodiments of the present specification may be understood by the disclosure of which is generally skilled in the art of the present disclosure, unless otherwise defined. The "first", "second", and similar words used in one or more embodiments are not used in one or more embodiments, and only the number, quantity or importance is used to distinguish between different components. Similar words such as "including" or "include" mean the elements or objects of the previous article, including the elements or objects that appear later in the word, without excluding other components or objects. Similar words such as "Connect" or "Connect" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "On", "lower", "left", "right" or the like is only used to represent a relative positional relationship, and when the absolute position of the described object is described, the relative positional relationship may also change accordingly.
[0057] In one aspect, one or more embodiments of the present specification provide a short trench effect control method. Alternatively, the preparation method is applicable to the preparation of silicon carbide metal oxide semiconductor field effect transistors.
[0058] Such as figure 1 As shown, one or more embodiments of the present specification are made of a short trench field effect tube, including:
[0059] S1: Get the first conductive substrate 1, and the first conductive substrate 1 is laminated with a first conductive epitaxial layer 2, and the injection mask layer 3 is generated on the upper surface deposition of the first conductive epitaxial layer 2;
[0060] S2: Etching the injection mask layer 3 generates a mask window having an injection mask angle, the injection mask angle 301, refers to the side wall of the mask and the first conductive epitaxial layer 2. The angle formed by the surface;
[0061] S3: The second conductive ion implantation is sequentially carried out by the mask window;
[0062] The second conductive ion is perpendicular to the upper surface of the first conductive epitaxial layer 2 to form a second conductive doped region 4;
[0063] The first conductive ion is inclined with respect to the upper surface of the first conductive epitaxial layer 2 to form a first conductive doped region 5;
[0064] S4: The first conductive doped region 5 is smaller than the second conductive doped region 4, and the second conductive doped region exceeds a portion of the first conductive doped region forms a short channel 6, The source, gate and drain are provided on the basis of the short channel to form the short channel field effect tube.
[0065] Such as figure 2 As shown, the short channel structure in the short channel field effect tube is shown.
[0066] In the short channel field effect tube fabrication, the form of an oblique angle mask having an injection mask is employed, and there is no peer relationship between the first conductive ion implantation, the second conductive ion implantation, and the injection mask angle. The ion blocking capability characteristics are realized to the first conductive doped region corresponding to the first conductive ion, the second conductive ion, the second conductive doped region, in ensuring the pair While the channel length is accurately controlled, the operation process of the technical solution is simple and stable, easy to implement.
[0067] The layer structure after the surface deposition of the first conductive epitaxial layer 2 generates the injection mask layer 3 image 3 Indicated. The injection mask layer 3 material includes at least one of silica, silicon nitride, aluminum nitride, polysilicon, amorphous silicon, in some alternative embodiments, in the thickness of the injection mask layer 3 2μm ~ 3 μm. Alternatively, the first conductive epitaxial layer 2 is selected from the group consisting of silicon carbide.
[0068] The injection mask layer 3 needs to be etched to some of the optional embodiments of the present specification, and the photoresist 7 is applied to the surface of the injection mask layer 3, and the development of light is exposed. The injection mask layer 3 is etched by the interpolation window by an engraving window.
[0069] Such as Figure 4 As shown, in some of the optional embodiments of the present specification, the injection mask layer 3 is carried out to form a mask window having the injection mask angle 301, including:
[0070] The surface of the injection mask layer 3 is evenly applied to the photoresist 7;
[0071] The development pattern is determined based on the target etching position and the target etched shape, and the photolithography 7 is exposed and developed according to the developing pattern, and the photolithography window is generated. Figure 4 Dedicated to generate a lithography window after the photolithography window;
[0072] The injection mask layer is etched by the crystal window;
[0073] The etching time, etching speed, physical etching, and chemical etching ratio are controlled, such that the mask window side wall is formed on the upper surface of the first conductive epitaxial layer, i.e., the injection Mask angle 301. When the short-channel field effect tube is implemented, the angular range of the injection mask angle 301 is controlled is from 70 ° to 80 °. Figure 5 The injection mask layer 3 is shown after the mask window is generated.
[0074] The injection mask layer 3 is generally a transparent material, and the first conductive epitaxial layer 2 in the injection mask layer 3 is a translucent material, and the light transmittance is different from the injection mask layer 3, When the photoresist 7 is exposed on the transparent injecting mask layer 3, the reflection of the translucent of the first conductive epitaxial layer 2 on the light of the photoresist 7 affects the energy absorption of the photoresist 7. Thus, in some alternative embodiments, when the photoresist 7 is exposed, the influence of the light transmittance of the first conductive epitaxial layer 2 on the light reflection is considered, and the first A conductive epitaxial layer 2 light transmittance, regulating the exposure focal length and exposure energy, enhances the angle of a certain inclination of the side wall of the photolithography window generated after the development, that is, The pre-ethage angle 701 is described. By controlling the exposure focal length and exposure energy, the angle of the pre-ethage angle 701 can be controlled.
[0075] Controlling the side wall of the crystal window forms the pre-ethage angle 701 on the upper surface of the injection mask layer 3, which acts in reducing etching control when etched to generate a mask window injecting the mask angle 301. Operational difficulty. When the above-described exposure focal length and exposure energy are not performed, the lithographic window side wall relative to the injection mask layer 3 is relatively steep, and then the cryptographic window is used. The injection of the mask layer 3 is etched, and it is necessary to achieve the effect of controlling the injection mask 301 angle by controlling etching time, etching speed, physical etching and chemical etching ratio to achieve the effect of controlling the injection mask angle 301. The aforementioned etching time, etching speed, physical etching and chemical etching ratio, the parameters involved in the parameters involved in etching, and the process is difficult to perform during the implementation of the specific operation.
[0076] In the short-channel field effect tube production method described in this specification, the photoresist 7 is exposed to the exposure of the exposure focus and exposure before etching, and the photolithography is made. The window forms the pre-ethage angle 701 having a certain inclination angle. The sidewall shape of the mask window has replication relative to the photolithographic window side wall shape, and when the radial window side wall itself has a certain inclination, the injection mask layer 3 is etched, The required injection mask angle 301 is obtained by less etch affecting factor parameter adjustment and a relatively easy operation process. When the short-channel field effect tube is implemented, the angle of the pre-ethage angle 701 is greater than the angle of the injection mask angle 301, which is convenient to control the injection mask 4 at 70 ° to 80 °. The angle range is controlled in some alternative embodiments to control the angle range of 80 ° to 85 ° in some alternative embodiments.
[0077] In a short trench field effect method, a second conductive ion implantation is sequentially performed by the mask window in some optional embodiments of the present specification.
[0078] Wherein, the second conductive ion is perpendicular to the upper surface of the first conductive epitaxial layer 2 to form a second conductive doped region 4; the first conductive ion is inclined with respect to the first conductive epitaxial layer upper surface 2. The first conductive doped region 5.
[0079] The first conductive doping region is an n-type, and the second conductive doped region is a p-type; or the first conductive doped region is a p-type, and the second conductive doped region is an n-type. Conductive ions corresponding to the p-type conductive doped region are p-type injection ions, and the p-type injection ions include at least one of aluminum ions, boron ions; electrocogenic ions corresponding to the n-type conductive doped region are n-type injection. Ions, the N-type injection ions include at least one of a nitrogen ion, a phosphorus ion, arsenic ion.
[0080] Such as Image 6 As shown, in some optional embodiments of the present specification, the second conductive ion implantation is performed by the mask window, including:
[0081] According to the predetermined range dimensions of the second conductive doped region, the injection energy and implantation concentration of the second conductive ion is determined in conjunction with the injection mask angle 301 angle and the material properties of the injection mask layer.
[0082] The second conductive doped region 4 is formed by vertically injecting the second conductive ion in accordance with the injection energy and implantation concentration.
[0083] Material SiO in the injection mask layer 2 The second conductive ion Al ion, the injection mask angle 75 ° as an example, the injection energy range of the second conductive ion can take 250-600 keV. If the 1.5 μm thick implantation layer can block 500 keV energy conductive ions, under the injection of the mask in the mask in 75 °, for an Al ion injecting 500 kev energy, the injection mask layer 3 thickness exceeds 1.5 μm Can cause blocking to Al ions, such as Image 6 The medium shaded portion is shown, and the remainder indicates that Al ions can inject and pass through. Then, according to the angle of 75 °, 500 kev injection of the energy Al ion according to the angle of the injection mask angle 301, the passing thickness of 1.5 μm can determine the opening of the mask window than the horizontal injection dimension of the formed conductive doped region. The size is about 0.44 μm width. Among them, the ratio of the ion passing through the thickness and the lateral injection dimension exceeds the width of the opening size of the mask window, that is, the positive cut value of the injection mask angle 301.
[0084] Such as Figure 7 As shown, in some optional embodiments of the present specification, the first conductive ion implantation is performed by the mask window, including:
[0085] According to the predetermined range of the first conductive doped region, the injection molding direction angle 8 is determined in the injection mask angle 301 and the material properties of the injection mask layer 3, and the injection energy is determined. Injection concentration;
[0086] The injection direction angle 8 is an angle formed between the injection direction of the first conductive ion and the vertical direction of the first conductive epitaxial layer 2, such as Figure 7 The vertical direction of the upper surface of the first conductive epitaxial layer 2 will be marked in the vertical direction of the first conductive epitaxial layer 2;
[0087] According to the injecting direction angle 8, the injection energy is symmetrically inclined to the injection concentration to form the first conductive doped region 5.
[0088] Material SiO in the injection mask layer 2The first conductive ion N ion, the injection mask angle 75 ° as an example, the injection energy range of the first conductive ion can take 50-200 keV, and the injection ion concentration is greater than 1e18cm. -3 The angle range of the injection direction angle 8 can be taken from 0 ° to 30 °. If a 0.4 μm thick implantation layer can block 200 Kev energy conductive ions, in the 75 ° injection mask angle structure, for the injection of N ions inserted with 200 kev energy, injecting angle angle of 20 °, the relative ion implantation direction The portion of the mask layer 3 thickness exceeds 0.4 μm can cause blocking to N ions, such as Figure 7 The medium is shown, and the remainder indicates that N ion can inject and pass through. Under the blocking of the injection mask layer 3, the lateral injection dimension of the formed conductive doped region can be determined compared to the opening size of the mask window to about 0.24 μm. Among them, the ratio of the ion passing through the thickness and the lateral injection dimension exceeds the width of the mask window opening size, which can pass the injection mask angle 3, the formed geometric triangle function between the injection direction angle 8 Relationship determination.
[0089] According to the various parameters set in the above embodiment, the lateral injection dimension of the second conductive doped region 4 is about 0.44 μm in the open size of the mask window, and the first conductive is incorporated. The horizontal injection dimension of the miscellaneous regions 5 is about 0.24 μm in the open size of the mask window, and the second conductive doped region 4 has a portion of the first conductive doped region 5 forms a short channel. 6. The length of the trench 6 is 0.20 μm, that is, the difference thereof of the aforementioned two. The source, gate and drain are provided on the short channel, and the short channel field effect tube is formed.
[0090] From this, the short-channel field effect tube production method provided in the present specification is disclosed, and the form of a bevel mask having an injection mask is employed, and the second conductive ion implantation is not peer and the second conductive ion implantation is not peer. The injection mask angle to the blocking ability characteristics of the injected ion, the first conductive doped region corresponding to the first conductive ion, the second conductive ion, respectively, the size range of the second conductive doped region, respectively. Precise control, when generating a mask window having an injection mask using a photoresist, a photolithography window having a pre-etched angle is predetermined, and more concise and accurately controlled an angle of injection angle of the mask angle in the pre-ethage angle. After the structure of the injection mask angle, the ion implantation of the non-equal relationship can be performed in order to achieve a device channel of 0.15 μm to 0.25 μm submicron length level, which can greatly reduce the channel resistance to increase current density. While ensuring precise control of the channel length, the operation process of the technical solution is simple and stable, easy to implement.
[0091] In another aspect, one or more embodiments of the present specification provide a short trench effect tube.
[0092] The short channel field effect tube is obtained by the following production method:
[0093] The first conductive substrate is obtained, and the first conductive extension layer is laminated.
[0094] An injection mask layer is generated on the upper surface deposition of the first conductive epitaxial layer;
[0095] Etching the injection mask layer has a mask window having an injection mask angle, the injection mask angle refers to an angle formed by the mask window side wall and the first conductive epitaxial layer. ;
[0096] The second conductive ion implantation is sequentially carried out by the mask window;
[0097] The second conductive ion is perpendicular to the upper surface of the first conductive epitaxial layer to form a second conductive doped region;
[0098] The first conductive ion is inclined with respect to the first conductive epitaxial layer to form a first conductive doped region;
[0099] The first conductive doped region is smaller than the second conductive doped region, the second conductive doped region exceeds a portion of the first conductive doped region forms a short channel, in the short channel On the basis, the source, gate and drain are provided, and the short channel field effect tube is formed.
[0100] The channel length of the short channel field effect tube is controlled at 0.15 μm to 0.25 μm submicron length level, which can greatly reduce the channel resistance boost current density.
[0101] Alternatively, the short channel field effect tube is selected from the group consisting of silicon carbide metal oxide semiconductor field effect transistors (SiCMOSFET).
[0102] One of ordinary skill in the art will appreciate that the discussion of any of the above embodiments is merely exemplary, and is not intended to impose that the scope of the present disclosure (including the claims) is limited to these examples; in the idea of the present disclosure, the above embodiments or A combination can also be performed between the technical features in different embodiments, and the steps can be implemented in any order, and there are many other changes in different aspects of the present specification as described above, in order to concise them are not in detail. supply.
[0103] In addition, in order to simplify the description and discussion, and in order not to understand the present specification, one or more embodiments can be difficult to understand, or may be shown or may not be shown or may not be shown in the accumulated circuit (IC) chip and other components. A well-known power / ground connection. Furthermore, the device can be shown in the form of a block diagram to avoid being difficult to understand the present specification or more embodiments, and this also considers the fact that the details of the implementation of these block diagram devices are high depending on the implementation of this The platform of one or more embodiments (ie, these details should be completely within the scope of the invention). In the case where specific details (e.g., circuits) are described to describe the exemplary embodiments of the present disclosure, it will be apparent to those skilled in the art that there is a case where there is no such specific details without these specific details. One or more embodiments of the present specification are carried out. Therefore, these descriptions should be considered as illustrative and not restrictive.
[0104] Although the present disclosure has been described in conjunction with the specific embodiments of the present disclosure, many replacements, modifications, and variations of these embodiments will be apparent to those of ordinary skill in the art. For example, other memory architectures (eg, dynamic RAM (DRAM)) can use the discussed embodiments.
[0105] One or more embodiments are intended to cover all such alternatives, modifications, and variations that fall within a broad range of the appended claims. Therefore, any other omitted, modification, equivalent replacement, improvement, etc., which are omitted, modified, and the like, and other omitted, modifications, improvements, etc., should be included within the scope of the present disclosure.
