Supercharge Your Innovation With Domain-Expert AI Agents!

Epitaxial process method

An epitaxial process and process technology, applied in the field of epitaxial process, can solve problems such as large leakage rate of devices, and achieve the effect of improving device performance, performance and product yield

Pending Publication Date: 2022-03-01
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, the present invention provides an epitaxial process method to solve the problem of excessive device leakage rate existing in the existing epitaxial process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Epitaxial process method
  • Epitaxial process method
  • Epitaxial process method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] The present invention is described below based on examples, but the present invention is not limited to these examples. In the following detailed description of the invention, some specific details are set forth in detail. The present invention can be fully understood by those skilled in the art without the description of these detailed parts. In order not to obscure the essence of the present invention, well-known methods, procedures, procedures, components and circuits have not been described in detail.

[0030] Additionally, those of ordinary skill in the art will appreciate that the drawings provided herein are for illustrative purposes and are not necessarily drawn to scale.

[0031] Unless the context clearly requires, words like "including" and "including" throughout the application documents should be interpreted as an inclusive meaning rather than an exclusive or exhaustive meaning; that is, the meaning of "including but not limited to".

[0032] In the descr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an epitaxial process method. A semiconductor device is provided; loading the semiconductor device into a reaction chamber of an epitaxial process, and cooling the reaction chamber; carrying out a gas cleaning process on the reaction chamber in a cooling environment; raising the temperature of the reaction chamber, and carrying out a baking process; growing an epitaxial layer on the surface of the semiconductor device; and cooling the reaction chamber and the semiconductor device, and unloading the semiconductor device to exit from the reaction chamber. When the semiconductor device just enters the cavity, a cooling step is added, the reaction cavity is cooled, and the reaction cavity is subsequently cleaned in a low-temperature environment, so that impurity elements are not easy to drill into the device, the leakage rate of the device is reduced, and the performance of the device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an epitaxial process method. Background technique [0002] With the development of technology, the critical dimension (CD) of the device is getting smaller and smaller. When the process node of the device is below 28nm, it is often necessary to use embedded epitaxial layers in the source and drain regions to change the stress of the channel region, thereby increasing the current carrying capacity. Mobility of electrons and thus improve the performance of the device. [0003] In the current epitaxy process, after each device is deposited in the reaction chamber, the chamber needs to be cleaned, so that the environment of the next device is consistent with that of the previous device. figure 1 Shown as a flow chart of an existing epitaxy process method. Such as figure 1 As shown, the method includes: firstly, providing a semiconductor device, loading the semi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/3105C30B25/02C30B25/08
CPCC30B25/02C30B25/08H01L21/3105
Inventor 涂火金
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com