NOR Flash chip processing method and application thereof

Abstract

The invention relates to the technical field of semiconductor manufacturing, and discloses a NOR Flash chip processing method and application thereof, and the method comprises the steps of wafer testing, front-side film pasting, grinding and thinning, UV irradiation, front-side film uncovering, scribing and packaging testing which are carried out in sequence. The method further comprises an additional UV irradiation step and an additional wafer testing step which are added between the wafer testing step and the front film pasting step, the probability of data variation and loss when the Nor Flash chip is applied to the terminal can be effectively reduced, and the method has practical value in practical significance.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a NOR Flash chip processing method and application thereof. Background technique [0002] The wafer has a certain thickness after manufacturing and processing. The thickness of the NOR Flash wafer is generally 700-800 μm. Before packaging, it needs to be ground and thinned from the back of the wafer to achieve the required thickness. Figure 1-3 As shown, wafer grinding and thinning will produce foreign matter such as grinding dust and particles. In order to prevent foreign matter from contaminating the circuit on the front of the wafer, a protective film will be pasted on the front of the wafer before thinning, which is called the film sticking process in the industry; grinding After thinning, the protective film is torn off, and subsequent processing operations are carried out on the front of the wafer. The process of tearing off the protective film is called...

AI Technical Summary

Problems solved by technology

[0004] When using the traditional film-attaching and film-removing process, when the thinned wafer is torn off the front protective film, the stickiness of the film will curl, deform or even break the entire wafer tape, resulting in product scrapping

When using the emerging UV film sticking and peeling process, ultraviolet radiation on the Nor Flash wafer will cause electron migration in the Nor Flash chip, resulting in variation in its storage function, resulting in a certain proportion of defective products, and such defective products are difficult to remove. Screened out in subsequent processing operations

In the application of end customers, it shows that the Nor Flash chip has a certain PPM (parts per million: parts per million...) data loss

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