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Germanium-based gallium arsenide solar cell and preparation method thereof

A technology of solar cells and gallium arsenide, applied in the field of solar cells, can solve the problems of mismatching of the output current of the cells, limiting the conversion efficiency of the cells, etc., and achieve the effect of reducing the lattice constant, improving the photoelectric conversion efficiency, and improving the conversion efficiency.

Pending Publication Date: 2022-03-04
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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Problems solved by technology

At present, the most mature space solar cell product is the germanium-based triple-junction solar cell, and its bandgap distribution is 1.9 / 1.4 / 0.67eV. Among them, due to the large bandgap between the 1.4eV mid-cell and the 0.67eV germanium sub-cell gap difference, resulting in the output current mismatch of each sub-battery, which limits the further improvement of battery conversion efficiency

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  • Germanium-based gallium arsenide solar cell and preparation method thereof

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Embodiment Construction

[0040] In order to further understand the invention content, characteristics and effects of the present invention, the following examples are given, and detailed descriptions are as follows in conjunction with the accompanying drawings:

[0041] Such as figure 1 Shown, technical scheme of the present invention is:

[0042] A germanium-based gallium arsenide solar cell, comprising from bottom to top: a germanium substrate, a GaInP nucleation layer, a GaInAs buffer layer, a first tunnel junction, a Ga 1-a In a As lattice graded buffer layer, (AlGa) 1-b In b As / Ga 1-b In b As first period structure overshoot layer, Ga 1-c In c As subcell, second tunnel junction, (AlGa) 1-d In d As / Ga 1-d In d As period structure lattice graded layer, (AlGa) 1-e In e As / Ga 1-e In e As second period structure overshoot layer, Ga 1-f In f As 1-g P g Subcell, third tunnel junction, (AlGa) 1-h In h P sub-cell, Ga 1-j In j As cap layer. The germanium substrate is provided with a...

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Abstract

The invention discloses a germanium-based gallium arsenide solar cell and a preparation method thereof, and belongs to the technical field of solar cells. The solar cell sequentially comprises a germanium substrate, a GaInP nucleating layer, a GaInAs buffer layer, a first tunnel junction, a Ga1-a InaAs lattice gradient buffer layer, a (AlGa) 1-b InbAs / Ga1-b InbAs first periodic structure overshoot layer, a Ga1-c IncAs sub-cell, a second tunnel junction, a (AlGa) 1-d IndAs / Ga1-d IndAs periodic structure lattice gradient layer, a (AlGa) 1-eIneAs / Ga1-eIneAs second periodic structure overshoot layer, a Ga1-f InfAs1-gPg sub-cell, a third tunnel junction, a (AlGa) 1-h InhP sub-cell and a Ga1-jInjAs cap layer from bottom to top. The photoelectric conversion efficiency and the radiation resistance of the germanium-based gallium arsenide solar cell can be improved.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a germanium-based gallium arsenide solar cell and a preparation method thereof. Background technique [0002] Compared with traditional monocrystalline silicon solar cells for space use, gallium arsenide solar cells based on germanium substrates have the advantages of high conversion efficiency, high temperature resistance, radiation resistance, and high reliability, and have been widely used in the primary power supply of spacecraft. Among them, the load capacity and on-orbit life of the spacecraft are greatly improved. At present, the most mature space solar cell product is the germanium-based triple-junction solar cell, and its bandgap distribution is 1.9 / 1.4 / 0.67eV. Among them, due to the large bandgap between the 1.4eV mid-cell and the 0.67eV germanium sub-cell The gap difference leads to the output current mismatch of each sub-battery, which limits the furt...

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Application Information

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IPC IPC(8): H01L31/076H01L31/18
CPCH01L31/076H01L31/1844H01L31/1852Y02E10/544Y02E10/548Y02P70/50
Inventor 张恒孙强刘如彬张启明
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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