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Semiconductor structure and forming method thereof

A semiconductor and conductive layer technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problems of poor performance of metal interconnect structures, and achieve improved performance, lower resistance, and lower contact resistance. Effect

Pending Publication Date: 2022-03-08
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0004] However, the performance of metal interconnect structures formed by prior art is poor

Method used

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  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof

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Embodiment Construction

[0041] It should be noted that the "surface" and "upper" in this specification are used to describe the relative positional relationship in space, and are not limited to direct contact.

[0042] First, the reasons for the poor performance of existing semiconductor structures are described in detail in conjunction with the accompanying drawings, figure 1 to Figure 4 It is a structural schematic diagram of each step of a method for forming a conventional semiconductor structure.

[0043] Please refer to figure 1 , providing a substrate 100, the substrate 100 has a first dielectric layer 110, the first dielectric layer 110 has a first conductive layer 120 inside, and the first dielectric layer 110 exposes the top of the first conductive layer 120; Form the second dielectric layer 130 and the opening 140 in the second dielectric layer 130 on the surface of the first conductive layer 120 and the first dielectric layer 110, and the opening 140 exposes the top surface of the firs...

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Abstract

The invention discloses a semiconductor structure and a forming method thereof, and the structure comprises the components of a substrate which is internally provided with a first conductive layer and is exposed out of the top of the first conductive layer; the first dielectric layer is located on the substrate, and an opening for exposing the top surface of the first conductive layer is formed in the first dielectric layer; the first reaction layer is located on the first conducting layer exposed out of the opening, the material of the first reaction layer has first resistivity, and the first resistivity is within a preset range. The first reaction layer is beneficial to reducing the resistance between the second conductive layer and the first conductive layer, thereby being beneficial to improving the performance of the formed semiconductor structure.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a method for forming the same. Background technique [0002] The metal interconnection structure is an indispensable structure in semiconductor devices, which is used to realize the interconnection between active regions, the interconnection between transistors, or the interconnection between different layers of metal lines, Complete signal transmission and control. Therefore, in the semiconductor manufacturing process, the formation of the metal interconnection structure has a great influence on the performance of the semiconductor device and the semiconductor manufacturing cost. [0003] The method for forming the metal interconnection structure includes: providing a semiconductor substrate; forming a first dielectric layer on the semiconductor substrate, the first dielectric layer having a first opening; forming a first plug i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/528H01L23/532H01L21/768
CPCH01L23/5283H01L23/5286H01L21/76816H01L21/76831H01L21/76832H01L21/7685H01L21/76847H01L21/76879H01L23/53261
Inventor 于海龙荆学珍张浩雒建明韩静利
Owner SEMICON MFG INT (SHANGHAI) CORP
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