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Rare earth doped glass with ultra-wideband near-infrared fluorescence emission as well as preparation method and application of rare earth doped glass

A rare earth doping, fluorescent emission technology, applied in glass manufacturing equipment, glass molding, manufacturing tools, etc., can solve the problem of insufficient optical carrier channel optical communication capacity, small near-infrared spectral bandwidth, and unstable optical transmission signals. and other problems, to achieve the effect of excellent physical and chemical properties, stable optical fiber glass, and less harsh conditions

Active Publication Date: 2022-03-15
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the near-infrared spectral bandwidth range of the rare earth-doped fiber amplifiers obtained at present is small, and the spectral emission is not flat enough to provide sufficient optical carrier channels to meet the requirements of the increasing optical communication capacity. At the same time, its optical transmission signal is not Stability and poor communication quality limit its application

Method used

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  • Rare earth doped glass with ultra-wideband near-infrared fluorescence emission as well as preparation method and application of rare earth doped glass
  • Rare earth doped glass with ultra-wideband near-infrared fluorescence emission as well as preparation method and application of rare earth doped glass

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] S1, according to the mole percentage of the prepared rare earth doped glass product, weigh 0.35mol Pr 6 o 11 , 0.1mol Tm 2 o 3 , 0.2mol Er 2 o 3 , 61.35mol TeO 2 , 28mol ZnO, 6.7mol WO 3 , 3.3mol Bi 2 o 3raw material powder;

[0031] S2. Mix the raw material powder weighed in step S1 evenly, pour it into a corundum crucible, and transfer it to a precision temperature-controlled muffle furnace. Raise the furnace temperature of the muffle furnace from room temperature to 300 ° C, and dehumidify dry for 1 hour;

[0032] S3. Transfer the dehumidified mixture in step S2 to a silicon carbon rod electric furnace for melting. The temperature of the silicon carbon rod electric furnace is controlled at 900 ° C. After the mixture is completely melted, keep it for 10 minutes, and then stir it. After stirring for 20 minutes, continue Melting at a temperature of 900°C for 5 minutes to obtain a glass solution;

[0033] S4. Pouring the glass solution obtained in step S3 on t...

Embodiment 2

[0038] S1, according to the mole percentage of the prepared rare earth doped glass product, weigh 0.35mol Pr 6 o 11 , 0.1mol Tm 2 o 3 , 0.28mol Er 2 o 3 , 61.27mol TeO 2 , 28mol ZnO, 6.7mol WO 3 , 3.3mol Bi 2 o 3 raw material powder;

[0039] S2. Mix the raw material powder weighed in step S1 evenly, pour it into a corundum crucible, and transfer it to a precision temperature-controlled muffle furnace. The furnace temperature of the muffle furnace is raised from room temperature to 300 ° C, and dehumidified and dried 1 hour;

[0040] S3. Transfer the dehumidified mixture in step S2 to a silicon carbon rod electric furnace for melting. The temperature of the silicon carbon rod electric furnace is controlled at 900 ° C. After the mixture is completely melted, keep it for 10 minutes, and then stir it. After stirring for 20 minutes, continue Melting at a temperature of 900°C for 5 minutes to obtain a glass solution;

[0041] S4. Pouring the glass solution obtained in st...

Embodiment 3

[0047] S1, according to the mole percentage of the prepared rare earth doped glass product, weigh 0.35mol Pr 6 o 11 , 0.1mol Tm 2 o 3 , 0.35mol Er 2 o 3 , 60.2mol TeO 2 , 26.5mol ZnO, 8mol WO 3 , 4.5mol Bi 2 o 3 raw material powder;

[0048] S2. Mix the raw material powder weighed in step S1 evenly, pour it into a corundum crucible, and transfer it to a precision temperature-controlled muffle furnace. The furnace temperature of the muffle furnace is controlled at 310° C., and dehumidified and dried for 0.5 hours;

[0049] S3. Transfer the dehumidified mixture in step S2 to a silicon carbon rod electric furnace for melting. The temperature of the silicon carbon rod electric furnace is controlled at 910 ° C. After the mixture is completely melted, keep it for 15 minutes, and then stir it. After stirring for 15 minutes, continue Melting at a temperature of 910°C for 6 minutes to obtain a glass solution;

[0050] S4. Pouring the glass solution obtained in step S3 on the ...

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Abstract

The invention provides rare earth doped glass with ultra-wideband near-infrared fluorescence emission and a preparation method and application of the rare earth doped glass with ultra-wideband near-infrared fluorescence emission. The rare earth doped glass takes tellurate glass as a glass matrix and takes rare earth oxide as a doping substance; the Pr6O11 / Tm2O3 / Er2O3 composite material is prepared from the following components in percentage by mole: 0.3 to 0.4 mol percent of Pr6O11, 0.05 to 0.15 mol percent of Tm2O3, 0.15 to 0.35 mol percent of Er2O3, 60 to 63 mol percent of TeO2, 27 to 30 mol percent of ZnO, 5 to 8 mol percent of WO3 and 2 to 5 mol percent of Bi2O3. The rare earth doped glass has a better spectral width range and flat spectral emission, can be applied to electronic devices such as optical fiber amplifiers and tunable optical fiber lasers, and provides a better choice for the electronic devices.

Description

technical field [0001] The invention relates to the technical field of functional materials, in particular to a rare earth-doped glass with ultra-broadband near-infrared fluorescence emission and its preparation method and application, in particular to a Pr 3+ -Tm 3+ -Er 3+ The tellurite glass doped with three kinds of rare earth ions and the preparation method thereof can be applied to electronic devices such as broadband optical fiber amplifiers and tunable optical fiber lasers in the field of optical fiber communication. Background technique [0002] With the rapid development of network technology and 5G communication, the requirements for the capacity and speed of optical communication are getting higher and higher, especially for the gain bandwidth of optical fiber amplification. [0003] The fiber amplifier is connected to the pump laser to amplify the signal. The current fiber amplifiers include Raman amplifiers and erbium-doped fiber amplifiers. Raman amplifiers h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C4/12C03C3/12C03B19/02C03B25/02
CPCC03C4/12C03C3/122C03B19/02C03B25/025Y02P40/57
Inventor 周亚训丁家乐李城燕赵东义朱立桥
Owner NINGBO UNIV