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Array substrate, preparation method thereof and display panel

An array substrate and active layer technology, which is applied in semiconductor/solid-state device manufacturing, optics, instruments, etc., can solve the problems of low production efficiency and multiple doping of polysilicon, so as to reduce the number of doping times, improve production efficiency, reduce and the effect of the additional exposure process

Pending Publication Date: 2022-03-18
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The embodiment of the present application provides an array substrate and its preparation method, and a display panel, which are used to alleviate the technical problem of low production efficiency caused by multiple doping of polysilicon in the production process of existing display devices

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  • Array substrate, preparation method thereof and display panel
  • Array substrate, preparation method thereof and display panel
  • Array substrate, preparation method thereof and display panel

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Embodiment Construction

[0048] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Apparently, the described embodiments are only some of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application.

[0049] Such as figure 1 As shown, the existing array substrate includes a substrate 11, a light-shielding metal 12, a buffer material 13, a polysilicon layer 14, a gate insulating layer 15, a gate layer 16, an interlayer insulating layer 17, and a source-drain layer 18. The polysilicon layer includes a trench The track region 143, the lightly doped region 142 and the ohmic contact region 141, in the preparation process of the existing array substrate, after exposing the polysili...

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Abstract

The invention provides an array substrate, a preparation method thereof and a display panel. According to the array substrate, the active layer at least comprises the first active layer and the second active layer, when the active layer is formed, different doping factors can be doped into the active layer in sequence, the active layer at least comprising the first active layer and the second active layer is formed, the doping frequency of the active layer is reduced, and the doping efficiency of the active layer is improved. And moreover, ion implantation and additional exposure processes are reduced, and the preparation efficiency of the array substrate is improved.

Description

technical field [0001] The present application relates to the field of display technology, in particular to an array substrate, a manufacturing method thereof, and a display panel. Background technique [0002] In order to improve the display effect and reduce power consumption, display devices will use low-temperature polysilicon technology instead of amorphous silicon technology. However, in the preparation of low-temperature polysilicon thin film transistors, since the active layer of low-temperature polysilicon thin film transistors needs to be doped multiple times, ion implantation processes need to be performed through ion implantation machines, and additional exposure processes are required, resulting in the display device. There are many technological processes in the preparation process, and the cost is relatively high. [0003] Therefore, in the manufacturing process of the existing display device, there is a technical problem of low manufacturing efficiency cause...

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Application Information

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IPC IPC(8): H01L27/12H01L21/77H01L27/32G02F1/1368
CPCH01L27/1222H01L27/1248H01L27/127G02F1/1368H10K59/12
Inventor 罗成志
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD