34results about How to "Reduce implantation" patented technology

A method for forming a semiconductor device includes providing a substrate having at least a gate positioned thereon, forming at least a recess in the substrate adjacent to the gate, performing a first selective epitaxial growth (SEG) process to form a first epitaxial layer in the recess, performing an etching process to remove a portion of the first epitaxial layer to expose the substrate, and performing a second SEG process to form a second epitaxial layer on the first epitaxial layer.

A miniaturized implantable transponder in which all components, including the antenna, are fully integrated into a single microchip that has a conformal coating that consists of a polymeric substance that is applied by vapor deposition techniques resulting in reduced volume versus the typical implantable transponder and reduces the volume size of the typical implantable transponder to enable easier implantation in a patient virtually eliminating implantation trauma in a patient.

The present invention is directed to a switch circuit and method to quickly enable or disable the ion beam to a wafer within an ion implantation system. The beam control technique may be applied to wafer doping repaint and duty factor reduction. The circuit and method may be used to quench an arc that may form between high voltage electrodes associated with an ion source to shorten the duration of the arc and mitigate non-uniform ion implantations. The circuit and method facilitates repainting the ion beam over areas where an arc was detected to recover dose loss during such arcing. A high voltage high speed switching circuit is added between each high voltage supply and its respective electrode to quickly extinguish the arc to minimize disruption of the ion beam. The high voltage switch is controlled by a trigger circuit which detects voltage or current changes to each electrode. Protection circuits for the HV switch absorb energy from reactive components and clamp any overvoltages.

An ion beam is rapidly switched off during ion implantation on detecting a beam instability. The ion beam is generated or provided by a non-arc discharge based ion source, such as an electron gun ion source or an RF ion source. The ion beam is scanned across a workpiece from a starting location toward an ending location. During the scanning, one or more beam characteristics are monitored, such as beam current, beam flux, shape, and the like. An instability is detected when one or more of the beam characteristics deviate from acceptable values or levels. The ion beam is rapidly turned off on the detected instability.

An MV-PMOS and MV-NMOS configuring a high side drive circuit are formed in an n-type isolation region formed on a p-type semiconductor substrate. The MV-NMOS is connected to a p-type isolation region of an intermediate potential in the interior of the n-type isolation region. An n-type epitaxial region is provided in a surface layer of the p-type semiconductor substrate on the outer side of the n-type isolation region, and a p-type GND region of a ground potential (GND) is provided on the outer side of the n-type epitaxial region. A cavity is provided between the p-type semiconductor substrate and n-type epitaxial region between the high side drive circuit and p-type GND region, and a p-type diffusion region is provided penetrating the n-type epitaxial region and reaching the cavity. The intermediate potential is applied to the p-type isolation region.

An elongated modular implant is provided which has a distal part and a proximal part both having a leading end and a trailing end, respectively. The trailing end of the distal part includes a tool engagement portion and the leading end of the proximal part includes a distal part engagement portion for an engagement with the tool engagement portion of the distal part. The implant further includes an assembly element for firmly coupling the distal part and the proximal part when the first tool engagement portion of the distal part engages the distal part engagement portion of the proximal part. The proximal part trailing end may also have a tool engagement portion identical to the trailing end of the distal part.

A method for modulating a work function of a semiconductor device having a metal gate structure including the following steps is provided. A first stacked gate structure and a second stacked gate structure having an identical structure are provided on a substrate. The first stacked gate structure and the second stacked gate structure respectively include a first work function metal layer of a first type. A patterned hard mask layer is formed. The patterned hard mask layer exposes the first work function metal layer of the first stacked gate structure and covers the first work function metal layer of the second stacked gate structure. A first gas treatment is performed to the first work function metal layer of the first stacked gate structure exposed by the patterned hard mask layer. A gas used in the first gas treatment includes nitrogen-containing gas or oxygen-containing gas.

There are provided a method of manufacturing a semiconductor device which achieves a reduction in implantation masks, and such a semiconductor device. By implanting boron into NMOS regions using a resist mask and another resist mask as the implantation masks, p-type impurity regions serving as the halo regions of access transistors and drive transistors are formed. By further implanting phosphorus or arsenic into a PMOS region using another resist mask as the implantation mask, n-type impurity regions serving as the halo regions of load transistors are formed.

Methods disclosed herein include: (a) forming a channel in a sample, the channel extending one micron or more along a direction oriented at an angle to a surface of the sample; (b) exposing a portion of the sample above the channel to a particle beam to cause particles to leave the surface of the sample; and (c) forming an image of the sample based on particles that leave the surface.

A display capable of suppressing reduction of a scanning property is provided. This display comprises a shift register circuit formed by connecting a plurality of first circuit parts each including a first conductivity type first transistor connected to a first potential and turned on in response to a clock signal, a first conductivity type second transistor connected to a second potential and a first conductivity type third transistor, connected between the gate of the first transistor and the second potential, having two gate electrodes electrically connected with each other.

The invention relates to a balloon system for postpartum recovery. The balloon system comprises a catheter, a main balloon, an auxiliary balloon, a main balloon liquid injection channel, an auxiliaryballoon liquid injection channel, a drainage channel, a main balloon pressure reducing valve, an auxiliary balloon pressure reducing valve, a pressure detector and a control system. The balloon systemcan be used for postpartum compression hemostasis and uterus recovery of a puerpera, implantation of other uterine supports can be reduced, and trauma to the puerpera is reduced.

A modular hip joint prosthesis system has an intermediate element which has an inner cone for receiving a prosthesis neck and an outer cone, a joint hall head which is embodied as a plug head having an inner cone associated with the outer cone of the intermediate element, and a bipolar joint socket in which an inlay is received in the outer shell in a freely moving manner and which has a ball receiver which is associated with the joint ball head, configured, such that said joint ball head can be received in a movable manner. A premounted joint prosthesis system part for a modular joint prosthesis system and a sterile article are also provided.

A display having a shift register circuit capable of suppressing increase of power consumption is provided. This display comprises a shift register circuit including a shift register circuit portion including a first circuit portion having a second transistor turned on in response to a first signal and a second circuit portion having a sixth transistor turned on in response to a second signal providing an ON-state period not overlapping with an ON-state period of the second transistor and an input signal switching circuit portion for switching the first and second signals supplied to the second and sixth transistors respectively.

A display capable of inhibiting a logic composition circuit from outputting a signal to a gate line or a drain line at unintentional timing is obtained. In this display, at least either a first shift register circuit portion or a second shift register circuit portion includes a reset transistor for resetting the voltage supply source of a node outputting a first shift signal or a second shift signal to a second voltage supply source not turning on transistors of a logic composition circuit portion in response to an output signal received from a shift register circuit portion precedent thereto by at least two stages with respect to a scanning direction.

The invention relates to a device for distally moving a posterior dentition, which comprises a connector (1), an anchorage component (2) and a vertical control device, wherein the connector (1) comprises an annular body (11) and a buccal side connecting rod (12), the annular body (11) respectively covers a first molar and a canine and is connected with the first molar and the canine through the buccal side connecting rod (12), the anchorage component (2) is arranged on the buccal side and is connected with the connector (1), and the vertical control device is connected with the connector (1). Compared with the prior art, the device disclosed by the invention does not need bonding, and can prevent the extropion of teeth in the process of distally moving the dentition.

The invention discloses a one-piece molar-back-pushing device. The device comprises: a pair of retention pieces, wherein a pair of the retention pieces is separately fixed at the palate side of dentalcrowns of molars at the two side of the oral cavity; a connecting body which is arranged between a pair of the retention pieces in a connection mode; traction hooks, wherein a plurality of the traction hooks comprise front traction hooks and side traction hooks, the front traction hooks are arranged on the connecting body, and the side traction hooks are respectively arranged on the retention pieces; at least one micro screw which is fixed at the palate part of the oral cavity and is positioned at the far middle side of the connecting body; and at least one connecting piece, wherein each connecting piece is arranged between one micro screw and one traction hook in a connection mode. The one-piece molar-back-pushing device is simple in structure and convenient to use, can push back molarsas far as possible within the physiological limit, can effectively overcome the defects of lip inclination of anterior teeth, cheek inclination of posterior teeth, tooth rotation and the like, and reduces the implantation number of micro screws.

The invention discloses a method for improving transfer embryo use ratio of a multiparous mammal. Parthenogenetic activation blastaea which cannot grow to individuals and cloned embryos are implanted together to maximize the use ratio of the cloned embryos.