Preparation method of novel multifunctional light-emitting triode device

Abstract

The invention provides a preparation method of a novel multifunctional light-emitting triode device, which comprises the following steps of: in the growth process of an epitaxial layer of the light-emitting triode device, performing epitaxial growth for multiple times, and controlling the structure of the device by preparing a dielectric layer and performing wet etching in each epitaxial process; wherein the prepared dielectric layer is used for controlling an effective area of next epitaxial growth; and wet etching is used for removing the dielectric layer. The process comprises the steps of semiconductor photoetching, semiconductor epitaxy, wet etching, preparation of a mask layer through photoetching, preparation of a dielectric layer in an area outside the mask layer, removal of the mask layer and the like to prepare the semiconductor layer. Compared with the prior art, the scheme provided by the invention solves the problem that the precision is difficult to guarantee in a photoetching process, reduces the difficulty of device preparation, saves the manufacturing cost, and has important significance for improving the device preparation efficiency.

Description

technical field [0001] The invention belongs to the technical field of manufacturing optoelectronic light-emitting devices, and in particular relates to a preparation method of a novel multifunctional light-emitting triode device. Background technique [0002] LED has the advantages of high brightness, high light efficiency, long life, high contrast, and nanosecond response time. But traditional LED technology for lighting and displays often requires specialized electronic drive circuits. Traditional electronic drive circuits are usually realized by discrete devices. Such discrete drive circuits have problems such as bulky size, parasitic parameters, and packaging caused by peripheral circuits. At present, it is a common technical means to integrate the driving circuit and LED on the same wafer. [0003] The current mainstream LED micro-display integrated drive technology is to integrate LEDs and transistors, such as MOS tubes, FETs, and BJTs. The bipolar transistor (BJT)...

AI Technical Summary

Problems solved by technology

[0004] Aiming at the deficiencies of the prior art, the present invention proposes a method for preparing a novel multifunctional light-emitting triode device. The purpose of the design is to solve the problem of precision that is difficult to guarantee in the photolithography process, and to complete the preparation of LED integrated devices with a simpler process.

Compared with the existing technology, the solution of the present invention solves the problem of precision that is difficult to guarantee in the photolithography process, reduces the difficulty of device preparation, saves the production cost, and is of great significance for improving the efficiency of device preparation

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