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Preparation method and application of ionic liquid modified quantum dots

A technology of ionic liquids and quantum dots, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve problems such as hindering effective charge transfer, and achieve the improvement of device optoelectronic performance, improved stability, and continuous thin film. uniform effect

Pending Publication Date: 2022-03-25
北京安兴高科新能源发展有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But such macromolecular particles create a highly insulating barrier around the quantum dots, preventing efficient charge transfer between adjacent quantum dots.

Method used

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  • Preparation method and application of ionic liquid modified quantum dots
  • Preparation method and application of ionic liquid modified quantum dots
  • Preparation method and application of ionic liquid modified quantum dots

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Experimental program
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Effect test

Embodiment 1

[0037] This embodiment provides a method for preparing ionic liquid-modified quantum dots, and a semiconductor device prepared by using the ionic liquid-modified quantum dots. The preparation process is as figure 1 shown, including the following steps:

[0038] (1) Preparation of semiconductor quantum dots

[0039] Weigh 0.4383g of selenium powder and dissolve it in 5ml of tri-n-octylphosphine (TOP), stir magnetically at 60°C for 2h to form a TOPSe precursor; weigh 0.225g of lead oxide as the lead source, mix with 1ml of oleic acid and 7.5ml of Put the octanes together into a double-necked flask, add a magnetic stirrer, vacuumize the double-row tube system for 30 minutes, then pass in nitrogen, heat to 180°C in a nitrogen atmosphere, inject the TOPSe precursor into the double-necked flask, and control The reaction time is 3 minutes, and a dark brown PbSe semiconductor quantum dot solution can be obtained. Add a small amount of chloroform and 10ml methanol to it, pour it int...

Embodiment 2

[0055] This embodiment provides a method for preparing ionic liquid-modified quantum dots, and a semiconductor device prepared by using the ionic liquid-modified quantum dots. Except that no ionic liquid is added in step (2), other preparation processes are the same as in embodiment 1.

[0056] Specifically, step (2) is to take 40 mg of PbSe semiconductor quantum dots prepared in step (1) and disperse them in 2 ml of toluene to obtain a PbSe quantum dot-toluene solution, which is used for spin coating and preparing field effect transistors.

[0057] The photoelectric test results are shown in Table 1.

Embodiment 3

[0059] This embodiment provides a method for preparing ionic liquid-modified quantum dots, and a semiconductor device prepared by using the ionic liquid-modified quantum dots. Except for changing the amount of ionic liquid added in step (2), other preparation processes are the same as in embodiment 1.

[0060] Specifically, step (2) is to take 20 mg of PbSe semiconductor quantum dots prepared in step (1) and disperse them in 2 ml of toluene to obtain a PbSe quantum dot-toluene solution, and add 10 mg of ionic liquid 1-amine to the PbSe quantum dot-toluene solution Propyl-3-methylimidazolium bromide, ultrasonic 1h to make it uniformly dispersed.

[0061] The photoelectric test results are shown in Table 1.

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Abstract

The invention provides a preparation method of an ionic liquid modified quantum dot, the method comprises the following steps: preparing a PbSe semiconductor quantum dot through a thermal injection method, then adding an ionic liquid into the quantum dot for ligand exchange to replace an oleic acid long-chain ligand on the surface of the quantum dot, and the method can improve the stability of the quantum dot in air. The invention also provides application of the quantum dot in a semiconductor device, the quantum dot is dispersed in an organic solvent for spin coating to prepare a semiconductor quantum dot film, the obtained film is more continuous and uniform, and the photoelectric property of the device is remarkably improved.

Description

technical field [0001] The invention relates to the technical field of surface modification of quantum dots, in particular to a method for preparing quantum dots modified by ionic liquids, the quantum dots obtained by the method, and the application of the quantum dots in semiconductor devices. Background technique [0002] Semiconductor quantum dots have the advantages of adjustable optical bandgap, simple surface modification, and easy synthesis, and can be widely used in various optoelectronic devices such as photodetectors, light-emitting diodes, laser detectors, and solar cells. However, semiconductor quantum dots have a large specific surface area and are easily oxidized, resulting in uncontrollable photoelectric performance, which limits their application in optoelectronic devices. [0003] The most successful preparation method for semiconductor quantum dots is to use surface ligands to stabilize organic molecular particles with long chains (typically 8-18 carbons or...

Claims

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Application Information

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IPC IPC(8): C09K11/88C09K11/02B82Y30/00B82Y40/00B82Y20/00H01L51/48H01L51/56
CPCC09K11/88C09K11/025B82Y30/00B82Y40/00B82Y20/00H10K71/15H10K71/12Y02E10/549
Inventor 冯文然李珍万江红蔡晓芸马继楠
Owner 北京安兴高科新能源发展有限公司
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