Double-zero-point adjustable substrate integrated waveguide filter structure suitable for 5G communication high frequency band

Abstract

The invention discloses a double-zero-point adjustable substrate integrated waveguide filter structure suitable for a 5G communication high frequency band, and belongs to the technical field of microwave passive devices. The filter comprises a top surface metal layer, a middle dielectric plate and a bottom surface metal layer, the middle dielectric plate is internally provided with a plurality of metalized via holes for connecting the top surface metal layer and the bottom surface metal layer, the space between the top surface metal layer and the bottom surface metal layer is divided into four resonant cavities, and coupling windows are sequentially arranged among the first resonant cavity, the second resonant cavity and the third resonant cavity; a cross coupling annular groove communicated with the first resonant cavity and the fourth resonant cavity is etched in the top surface metal layer; the metal etching groove is innovatively proposed for the first time in the patent, and capacitive coupling can be realized between the two substrate integrated waveguide resonant cavities, so that cross coupling is added in some coupling topological structures of the filter, and a transmission zero point is introduced. A cross coupling structure is introduced into the substrate integrated waveguide filter to realize double zero points of upper and lower edge frequencies, and controllability of the double zero points is realized by changing structural parameters of novel capacitance coupling.

Description

technical field [0001] The invention relates to the technical field of microwave passive devices, in particular to a dual-zero-point adjustable substrate integrated waveguide filter structure suitable for high-frequency bands of 5G communications. Background technique [0002] With the rapid development of mobile communication and satellite communication, especially with the rapid development of the 5G communication era, higher requirements are put forward for microwave integrated circuits. Highly reliable equipment requires microwave integrated circuits to minimize the area occupied by the circuit while meeting the electrical performance indicators. [0003] At the same time, with the development of communication technology and the gradual acceleration of 5G commercial use, electromagnetic frequency resources are becoming more and more tense, and the interference between similar frequencies is increasing. At the same time, due to the non-renewability of spectrum resources, ...

AI Technical Summary

Problems solved by technology

In the high-frequency field, such as in the 5G communication FR2 frequency band, dielectric resonators designed based on materials with higher dielectric constants are not suitable for 5G communication FR2 frequency bands due to the limitation of processing technology and the huge impact of size changes on frequency. Filter design; the current hot dielectric waveguide filter is also not suitable for the design of filter devices in the millimeter-wave frequency band due to structural constraints and limitations in feeding methods; traditional microstrip line structure filters are more difficult to play in the millimeter-wave frequency band strength

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