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Preparation method of composite substrate, composite substrate and electronic component

A technology of electronic components and composite substrates, which is applied in the direction of electrical components, electric solid devices, semiconductor devices, etc., can solve the problems of abnormal growth of polysilicon, low surface roughness, low uniformity of grains, etc., and improve the crystal lattice Matching degree, reduced lattice size difference, effect of large grain size

Pending Publication Date: 2022-04-05
JINAN JINGZHENG ELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] This application provides a method for preparing a composite substrate, a composite substrate and electronic components to solve the problem of abnormal growth of polysilicon at the substrate interface in the prior art. The crystal grains prepared on the substrate are not high in uniformity, Problems with polysilicon layers with low surface roughness

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  • Preparation method of composite substrate, composite substrate and electronic component

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preparation example Construction

[0029] In one aspect, the present application provides a method for preparing a composite substrate, comprising the following steps:

[0030] The supporting substrate 110 is prepared, and the supporting substrate 110 may be made of materials such as lithium niobate, lithium tantalate, sapphire, silicon, quartz or silicon carbide, which is not limited in this application.

[0031] Preparing a first polysilicon thin film layer 121 on the support substrate 110 at a first process temperature;

[0032] Performing a first annealing treatment on the obtained first polysilicon thin film layer 121 to obtain a polysilicon seed layer 122;

[0033] At the first process temperature, the second polysilicon thin film layer 123 is prepared on the polysilicon seed layer 122 to obtain a composite substrate; wherein, the first annealing temperature is higher than the first process temperature.

[0034] In practical application, the thickness of the first polysilicon thin film layer 121 is 1-30 ...

Embodiment 1

[0067] Step 1: prepare a cleaned 6-inch silicon wafer with a thickness of 0.675mm, and deposit a layer of silicon with a thickness of 10nm on the silicon wafer by low-pressure chemical vapor deposition (LPCVD) at 600°C (first process temperature). the first polysilicon film layer;

[0068] Step 2: Perform the first annealing treatment on the prepared first polysilicon thin film layer at 850° C. for an annealing time of 3 hours. After annealing, the grains of the first polysilicon thin film layer grow up to form a polysilicon seed layer ;

[0069] Step 3: Deposit a second crystalline silicon thin film layer of 800 nm on the polycrystalline silicon seed layer by low-pressure chemical vapor deposition (LPCVD) at 600° C. to obtain a composite substrate.

Embodiment 2

[0071] Step 1: prepare a cleaned 6-inch silicon wafer with a thickness of 0.675mm, and deposit a layer of 10nm-thick silicon wafer on the silicon wafer by low-pressure chemical vapor deposition (LPCVD) at a first process temperature of 600°C. A polysilicon film layer;

[0072] Step 2: Perform the first annealing treatment on the prepared first polysilicon thin film layer at 850° C. for 3 hours; the grains of the annealed first polysilicon thin film layer grow to form a polysilicon seed layer ;

[0073] Step 3: Depositing a 800nm ​​second crystalline silicon film layer on the polycrystalline silicon seed layer by low pressure chemical vapor deposition (LPCVD) at a second process temperature of 600°C;

[0074] Step 4: The prepared second crystalline silicon thin film layer is subjected to a second annealing treatment at 800° C. to obtain a composite substrate.

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Abstract

The invention provides a preparation method of a composite substrate, the composite substrate and an electronic component. The preparation method of the composite substrate comprises the following steps: preparing a first polycrystalline silicon thin film layer on a substrate, further growing crystal grains of the first polycrystalline silicon thin film layer through first annealing to obtain a polycrystalline silicon crystal seed layer, and continuously preparing a second polycrystalline silicon thin film layer on the polycrystalline silicon crystal seed layer, the influence of the substrate layer on crystal grains caused by low lattice matching degree is improved, the lattice matching degree is improved, the difference of the sizes of lattices in the first polycrystalline silicon thin film layer and the second polycrystalline silicon thin film layer is reduced, and the resistance uniformity of the polycrystalline silicon layers is improved. And meanwhile, the second polycrystalline silicon thin film layer is subjected to secondary annealing treatment, so that the reconstruction degree of polycrystalline silicon grains in the subsequent high-temperature process stage can be inhibited, the difference of the sizes of polycrystalline silicon crystal lattices is reduced, and a polycrystalline silicon layer which is close to the substrate layer and the insulating layer and is large in grain size and uniform in grain distribution is obtained.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular to a method for preparing a composite substrate, the composite substrate and electronic components. Background technique [0002] In recent years, a thin-film structure material applied on an insulator has attracted more and more attention from the industry. This material meets various requirements of electronic components, making it more and more important in the semiconductor industry. Thin-film structural materials include an active layer, an insulating layer, and a substrate layer in turn; among them, the active layer and the insulating layer are the main functional layers to realize the transmission of light, electricity, and sound signals. This kind of thin-film structure material applied on insulators shows good application performance in CPU chips, memories, amplifiers, filters, modulators and other devices. [0003] When an insulator is in direct contact w...

Claims

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Application Information

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IPC IPC(8): H01L21/205H01L21/316H01L21/318H01L21/762H01L27/12
Inventor 李真宇杨超孔霞刘亚明韩智勇陈明珠郑珊珊姜传晓
Owner JINAN JINGZHENG ELECTRONICS