Preparation method of molybdenum disulfide pattern

A molybdenum disulfide and patterning technology, applied in gaseous chemical plating, electrolytic coating, surface reaction electrolytic coating, etc., can solve the problems of high cost and unstable film preparation, and achieve the effect of preventing the loss of molybdenum source.

Pending Publication Date: 2022-04-08
FUZHOU UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are also limitations in the application process, such as high-quality, large-area MoS 2 The preparation of thin films is relatively unstable and the cost is high; in addition, practical devices are realized through various circuit patterns. According to the requirements of different device structures, prefabricated matching material patterns need to be designed, so MoS 2 The exploration of pattern growth methods is an inevitable requirement for realizing device construction. At the same time, growing patterns is the premise of array growth, which can lay the foundation for upgrading the performance research from a single device stage to an integrated device stage.

Method used

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  • Preparation method of molybdenum disulfide pattern
  • Preparation method of molybdenum disulfide pattern
  • Preparation method of molybdenum disulfide pattern

Examples

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Effect test

Embodiment 1

[0024] (1) Cut the custom-made Mo foil with specific graphics into a shape of suitable size, and ultrasonicate twice in absolute ethanol and water, each time for about 10 min, to remove impurities such as organic pollutants on the surface of the Mo foil;

[0025] (2) Pretreatment of Mo foil: The cleaned Mo foil was oxidized by electrochemical anodic oxidation, and the whole oxidation process was carried out in a three-electrode oxidation system, with Mo foil as the working electrode, platinum sheet as the counter electrode, and calomel electrode as the reference The specific electrode is oxidized in a special electrolyte solution, the electroplating voltage is about 0.52V, and the electroplating time is about 15 minutes. After electroplating, the oxidized Mo foil was taken out from the electrolyte, soaked in deionized water, cleaned and then dried naturally; wherein, the composition of the electrolyte was 0.15 mol / L H 2 C 2 o 4 • 2H 2 O, 0.1 mol / L Na 2 SO 4 and 0.01 mol / L...

Embodiment 2

[0029] (1) Cut the custom-made Mo foil with a specific pattern into a rectangle of 15×20 mm, and ultrasonicate it in absolute ethanol and water for about 10 min each time to remove impurities such as organic pollutants on the surface of the Mo foil;

[0030] (2) Pretreatment of Mo foil: The clean Mo foil is oxidized by electrochemical anodic oxidation method, and the whole oxidation process is carried out in a three-electrode oxidation system, Mo foil is used as the working electrode, platinum sheet is used as the counter electrode, and calomel electrode is used as the reference The electrode is oxidized in a special electrolyte solution, the electroplating voltage is about 0.58V, and the electroplating time is about 10 min. After electroplating, the oxidized Mo foil was taken out from the electrolyte, soaked in deionized water, cleaned and then dried naturally; wherein, the composition of the electrolyte was 0.15 mol / L H 2 C 2 o 4 • 2H 2 O, 0.1 mol / L Na 2 SO 4 and 0.01 m...

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Abstract

The invention provides a preparation method of a molybdenum disulfide pattern. The preparation method comprises the following steps: cutting a Mo foil pattern with a proper size; oxidizing the Mo foil pattern by using an electrochemical anodic oxidation method; and growing the MoS2 pattern by adopting an improved chemical vapor deposition method. The method for preparing the MoS2 patterns has the advantages of simplicity and convenience in operation, high practicability, diversified patterns, flexible position, capability of preparing large-area thin-layer uniform MoS2 film patterns and the like.

Description

technical field [0001] The invention belongs to the field of preparation of two-dimensional thin-layer materials, and in particular relates to a method for preparing molybdenum disulfide patterns with large-area thin-layer uniformity. Background technique [0002] MoS 2 It is a semiconductor material with a low-dimensional wide bandgap. The bandgap is thickness-dependent, and it is widely used in electronic device applications due to its excellent semiconductor properties (high switching ratio, mobility), suitable bandgap width, and high stability. It shows great advantages, and its planar structure makes it promising to be applied to electronic devices. However, there are also limitations in the application process, such as high-quality, large-area MoS 2 The preparation of thin films is relatively unstable and the cost is high; in addition, practical devices are realized through various circuit patterns. According to the requirements of different device structures, prefab...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/448C25D11/26
Inventor 郑晶莹黄永丰江凡陈奇俤詹红兵
Owner FUZHOU UNIV
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