A kind of 940nm reverse polarity infrared LED epitaxial wafer and preparation method thereof
An LED epitaxial wafer, reverse polarity technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of unclean growth on the surface of the epitaxial wafer, dirt on the surface of the epitaxial wafer, easy to drop particles, etc., to suppress the arsenide. Drop off, improve productivity and yield, and prevent drop off effects
Active Publication Date: 2022-05-27
南昌凯捷半导体科技有限公司
View PDF11 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0006] Aiming at the deficiencies of the prior art, the present invention provides a 940nm reverse-polarity infrared LED epitaxial wafer and a preparation method thereof, which eliminates the fall-off of arsenide particles during the existing 940nm reverse-polarity infrared LED epitaxial growth process, which causes the surface of the epitaxial wafer to The growth is not clean, and particles are easy to drop inside the reaction chamber, resulting in a lot of dirt on the surface of the epitaxial wafer and low yield. The surface of the 940nm reverse polarity infrared LED epitaxial wafer obtained by the present invention is clean and bright, and at the same time, the performance of each photoelectric parameter of the product is guaranteed. Effectively improve the productivity and yield of epitaxial wafers
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0040] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all of the embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the application, its application, or uses. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.
[0041] In the description of this application, it should be understood that the use of words such as "first" and "second" to define components is only for the convenience of distinguishing corresponding components. Unless otherwise stated, the above words have no special Ther...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention relates to the field of LED technology, in particular to a 940nm reverse polarity infrared LED epitaxial wafer and a preparation method thereof, wherein the LED epitaxial wafer grows an N-type GaAs substrate, an N-type GaAs buffer layer, and a corrosion cut-off layer sequentially from bottom to top , N-type ohmic contact layer, N-type electrode protection layer, N-type current spreading layer, N-type confinement layer, N-side space layer, light-emitting active layer, P-side space layer, P-type confinement layer, P-type current spread layer, P-type transition layer, P-type ohmic contact layer; before the N-type current spreading layer, a layer of N-type transition layer is pre-grown; the N-type current spreading layer is grown sequentially from bottom to top with ultra-low speed N-type current spreading layer, low-speed N-type current spreading layer, medium-speed N-type current spreading layer, and high-speed N-type current spreading layer. The surface of the 940nm reverse-polarity infrared LED epitaxial wafer of the present invention is clean and bright, and at the same time ensures stable performance of each photoelectric parameter of the product, and effectively improves the production capacity and yield rate of the epitaxial wafer.
Description
technical field [0001] The invention relates to the technical field of LEDs, in particular to a 940nm reverse polarity infrared LED epitaxial wafer and a preparation method thereof. Background technique [0002] With the advancement of the information age, optoelectronic materials and devices have been increasingly used in people's daily life. Infrared LED (Lighting Emitting Diode, light-emitting diode) is a near-infrared light-emitting device that converts electrical energy into light energy. It has a series of advantages such as small size, low power consumption, and good directivity. It is often used in remote controls and security cameras. , optical switch, infrared remote sensing, infrared high-speed communication, medical equipment and infrared lighting and other scenes. [0003] 940nm infrared is invisible light, so it has little impact on the environment, and the wavelength of infrared light fluctuation is much smaller than the wavelength of radio waves, so 940nm in...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/14H01L33/02H01L33/06H01L33/00
Inventor 王苏杰董耀尽林晓珊杨祺宁如光熊欢
Owner 南昌凯捷半导体科技有限公司