Plasma processing device and manufacturing method of gas spraying ring of plasma processing device

Abstract

The invention discloses a plasma processing device and a manufacturing method of a gas spraying ring of the plasma processing device. The upper electrode assembly is located at the top of the vacuum reaction cavity; the lower electrode assembly is located at the bottom of the vacuum reaction cavity, the lower electrode assembly and the upper electrode assembly are oppositely arranged, and the lower electrode assembly comprises a bearing surface used for bearing a wafer; the gas spraying ring is arranged on the outer side of the lower electrode assembly in a surrounding mode, the gas spraying ring comprises a plurality of gas supply holes, and the gas supply holes are connected with a reaction gas conveying device and used for conveying reaction gas into the vacuum reaction cavity so that plasma can be generated between the upper electrode assembly and the lower electrode assembly. The plasma processing device has the advantages that the reaction gas is conveyed through the gas spraying ring, the etching effect cannot be affected by non-uniform conveying of the reaction gas due to installation errors of the upper electrode assembly and the like, and the use stability of the plasma processing device is improved to a large extent.

Description

technical field [0001] The invention relates to the field of semiconductor equipment, in particular to a plasma processing device and a method for manufacturing the gas spray ring. Background technique [0002] In the manufacturing process of semiconductor devices, plasma etching is a key process for processing wafers into design patterns. During the entire wafer processing process, the cleanliness of the upper electrode assembly and the vacuum reaction chamber of the plasma processing device, as well as the uniformity of the reaction gas and plasma environment have a great influence on the etching effect of the wafer. [0003] In the existing plasma processing device, due to the needs of the equipment structure, the reaction gas delivery channel is usually composed of gaps between the parts inside the upper electrode assembly. This structure is widely used in wafer etching, especially wafer edge etching. Eclipse (wafer edge etching) field. Usually, the reaction gas delive...

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Problems solved by technology

However, in the actual installation process, there are often some installation errors between parts, and the uniformity of the gap on the entire circumference, that is, the uniformity of the width of the reaction gas delivery channel, cannot be guaranteed to be consistent, resulting in the problem of uneven etching

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