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Bonding structure and bonding method for reducing back sublimation of silicon carbide seed crystal

A technology of silicon carbide seed and bonding method, which is applied in the direction of chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve the problems of sublimation of the back of the seed crystal, improve the growth quality, and reduce the burning of the edge of the SiC seed crystal. Eclipse effect

Pending Publication Date: 2022-04-26
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to solve the problem of back sublimation of the seed crystal in the growth process of silicon carbide, and provide a bonding structure and bonding method that can reduce the back sublimation of the silicon carbide seed crystal

Method used

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  • Bonding structure and bonding method for reducing back sublimation of silicon carbide seed crystal
  • Bonding structure and bonding method for reducing back sublimation of silicon carbide seed crystal
  • Bonding structure and bonding method for reducing back sublimation of silicon carbide seed crystal

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Embodiment 1

[0040] The bonding structure and bonding method for reducing the sublimation of the silicon carbide seed crystal provided in this embodiment include:

[0041] Take a 4-inch silicon carbide seed crystal (100 mm in diameter and 0.3 mm in thickness), and the buffer layer and the annular protective layer are made of graphite paper. Take a seed crystal holder with a diameter of 110mm, cut out a buffer graphite paper with a diameter of 100mm, the thickness of the buffer graphite paper is 0.25mm, and cut out an annular graphite paper with an outer diameter of 108mm and an inner diameter of 100mm, and the thickness of the annular graphite paper is 0.5mm. The specific seed bonding method is not limited.

Embodiment 2

[0043] The bonding structure and bonding method for reducing the sublimation of the silicon carbide seed crystal provided in this embodiment include:

[0044] Take a 6-inch silicon carbide seed crystal (diameter is 152mm, thickness is 0.3mm), and the material of the buffer layer and the annular protective layer is graphite paper. Take the seed crystal holder with a diameter of 160mm, cut out the buffer graphite paper with a diameter of 152mm, the thickness of the buffer graphite paper is 0.1mm, and cut the ring-shaped graphite paper with an outer diameter of 158mm and an inner diameter of 152mm, and the thickness of the ring-shaped graphite paper is 0.25mm. The specific seed bonding method is not limited.

Embodiment 3

[0046] The bonding structure and bonding method for reducing the sublimation of the silicon carbide seed crystal provided in this embodiment include:

[0047] Take a 4-inch silicon carbide seed crystal (100mm in diameter and 0.3mm in thickness), the material of the buffer layer is graphite paper, and the material of the annular protective layer is tantalum sheet. Take a seed crystal holder with a diameter of 110mm, cut out a buffer graphite paper with a diameter of 100mm, the thickness of the buffer graphite paper is 0.25mm, and cut out an annular tantalum sheet with an outer diameter of 108mm and an inner diameter of 100mm, and the thickness of the annular tantalum sheet is 0.5mm. The specific seed bonding method is not limited.

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Abstract

The invention discloses a bonding structure and bonding method for reducing back sublimation of silicon carbide seed crystal, the bonding structure comprises a seed crystal support, seed crystal and a buffer layer, the edge of the seed crystal is provided with an annular protective layer, and the width of the annular protective layer is smaller than the radius difference between the buffer layer and the seed crystal support. By adopting the seed crystal bonding structure, no gap is reserved between the seed crystal and the inner wall of the crucible, but the seed crystal is not in direct contact with the inner wall of the crucible, the edge temperature of the seed crystal is not too high, the decomposition and sublimation probability is greatly reduced, and backward decomposition of the silicon carbide seed crystal can be effectively inhibited. Under the condition that the seed crystal bonding process is not changed, only the structural layout of the bonding material is changed, edge ablation of the SiC seed crystal and cavity defects in the crystal can be effectively reduced, and the method is simple and easy to implement and is used for various seed crystal bonding processes.

Description

technical field [0001] The invention belongs to the auxiliary technical field of silicon carbide crystal growth, and in particular relates to a bonding structure and a bonding method for reducing back sublimation of silicon carbide seed crystals. Background technique [0002] Physical vapor transport (Physical Vapor Transport, PVT) is currently the mainstream method for growing large-size silicon carbide (SiC) single crystal substrates. Crystallization in the low temperature region of the seed crystal. Wherein the fixing method of the seed crystal mostly adopts an adhesive (organic glue) to bond the seed crystal to the seed crystal support (a part of the crucible cover). The main problem of the current seed bonding technology is that there is a reverse decomposition phenomenon on the back of the seed crystal during the crystal growth process, and the degree of decomposition at the edge of the seed crystal is more serious. There are two possible reasons: First, since the he...

Claims

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Application Information

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IPC IPC(8): C30B29/36C30B23/00C30B33/06
CPCC30B29/36C30B23/00C30B33/06
Inventor 皮孝东张乃夫杨德仁
Owner ZHEJIANG UNIV