Crystalline silicon assembly manufacturing device

Abstract

The invention relates to a crystalline silicon assembly manufacturing device which comprises a base and a supporting plate fixedly installed on the base, a fixing plate and baffles symmetrically arranged are fixedly installed on the supporting plate, and a transverse plate is fixed to the baffles; the bearing assembly is movably mounted on the base and the supporting plate; the cutting line is connected with a lifting mechanism used for driving the cutting line to do reciprocating motion in the vertical direction, and the lifting mechanism is movably installed on the transverse plate; the driving mechanism is movably mounted on the fixing plate and the baffle and is connected with the lifting mechanism; the intermittent transmission mechanism is connected with the driving mechanism and movably installed on the fixing plate, and the driving mechanism drives the intermittent transmission mechanism to move; and the clamping mechanism is arranged on the supporting plate and is connected with the intermittent transmission mechanism.

Description

technical field [0001] The invention relates to the field of crystalline silicon, in particular to a crystalline silicon component manufacturing device. Background technique [0002] Crystalline silicon material is the most important photovoltaic material. It is a gray-black solid with metallic luster, high melting point (1410), high hardness, brittleness, and inactive chemical properties at room temperature. Its market share is over 90%. For a long period of time in the future, it will still be the mainstream material of solar cells. Monocrystalline silicon has the physical properties of metalloids and weak conductivity. Its conductivity increases with the increase of temperature, and it has significant semiconductivity. , Ultra-pure single crystal silicon is an intrinsic semiconductor, doping a small amount of group IIIA elements in ultra-pure single crystal silicon, such as boron, can improve its conductivity and form a p-type silicon semiconductor; for example, doping a ...

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Problems solved by technology

[0002] Crystalline silicon material is the most important photovoltaic material. It is a gray-black solid with metallic luster, high melting point (1410), high hardness, brittleness, and inactive chemical properties at room temperature. Its market share is over 90%. For a long period of time in the future, it will still be the mainstream material of solar cells. Monocrystalline silicon has the physical properties of metalloids and weak conductivity. Its conductivity increases with the increase of temperature, and it has significant semiconductivity. , Ultra-pure single crystal silicon is an intrinsic semiconductor, doping a small amount of group IIIA elements in ultra-pure single crystal silicon, such as boron, can improve its conductivity and form a p-type silicon semiconductor; for example, doping a small amount of group VA Elements such as phosphorus or arsenic can also improve the conductivity and form n-type silicon semiconductors. When making crystalline silicon components, they need to be cut into thin slices. Traditional cutting is done manually. This method has low efficiency and poor precision. Therefore, a new method is proposed. Crystalline silicon module manufacturing equipment

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