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Alignment mark for electron beam exposure and preparation method thereof

A technology of electron beam exposure and alignment mark, which is applied in the field of photolithography to achieve the effect of improving alignment accuracy and reliability

Pending Publication Date: 2022-05-10
北京量子信息科学研究院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] This application aims to provide an alignment mark for electron beam exposure and its preparation method, which solves the problem of precise positioning of the alignment mark

Method used

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  • Alignment mark for electron beam exposure and preparation method thereof
  • Alignment mark for electron beam exposure and preparation method thereof
  • Alignment mark for electron beam exposure and preparation method thereof

Examples

Experimental program
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Embodiment 1

[0044] figure 2 A schematic flow chart showing the preparation of an alignment mark using a layer of photoresist according to an exemplary embodiment of the present application.

[0045] Such as figure 2 As shown, according to an exemplary embodiment of the present application, the present application discloses a preparation method of an alignment mark 10 for electron beam exposure, including: covering a photoresist 101 on a substrate 100; Expose and develop to remove a part of the photoresist 101 on the substrate 100, thereby forming a pattern with a predetermined shape; while depositing metal on the substrate 100 and the photoresist 101 remaining on the substrate 100, make The photoresist 101 on the substrate 100 is thermally expanded; and the photoresist 101 remaining on the substrate 100 and the deposited metal on the substrate 100 are removed, so that a deposited metal having a predetermined shape is obtained on the substrate 100 .

[0046] In other words, figure 2 ...

Embodiment 2

[0060] image 3 A schematic flow chart showing the process of preparing an alignment mark from a 2-layer photoresist according to an exemplary embodiment of the present application. Figure 4 A schematic diagram showing the electron microscope scanning structure according to an exemplary embodiment of the present application.

[0061] Such as image 3 As shown, according to one aspect of the present application, a method for preparing an alignment mark 10 for electron beam exposure is proposed, comprising: covering a first photoresist 105 on a substrate 100; Covering the second photoresist 106; exposing and developing the first photoresist 105 and the second photoresist 106 in a predetermined shape, so as to remove a part of the first photoresist 105 and a part of the second photoresist on the substrate 100 glue 106, thereby forming a pattern with a predetermined shape; while depositing metal on the substrate 100 and the second photoresist 106 remaining on the substrate 100,...

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Abstract

The invention provides an alignment mark for electron beam exposure and a preparation method thereof. The preparation method comprises the following steps: covering photoresist on a substrate; exposing and developing the photoresist in a predetermined shape to remove a part of the photoresist on the substrate so as to form a pattern with the predetermined shape; metal is deposited on the substrate and the photoresist reserved on the substrate, and meanwhile the photoresist reserved on the substrate is heated and expanded; and removing the photoresist reserved on the substrate and the metal deposited on the photoresist so as to obtain the deposited metal with the preset shape on the substrate. According to the technical scheme, the alignment effect of the alignment mark is improved.

Description

technical field [0001] The present application relates to the technical field of photolithography, in particular to an alignment mark for electron beam exposure and a preparation method thereof. Background technique [0002] In pattern exposure (lithography) technology, material etching technology, thin film generation technology, ion implantation technology and bonded interconnection technology, among these processing technologies, pattern exposure technology is the main promoter of the development of microelectronics manufacturing technology. Due to the continuous improvement of the resolution of the exposure pattern and the accuracy of the overlay, the integrated level of the integrated circuit is continuously improved and the manufacturing cost is continuously reduced. Electron beam exposure technology is a key technology to promote the development of microelectronics and micro-nano processing, especially in the field of nano-manufacturing, which plays an irreplaceable r...

Claims

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Application Information

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IPC IPC(8): G03F9/00G03F7/20
CPCG03F9/708G03F9/7076G03F7/70633G03F7/2059
Inventor 张钦彤裴天
Owner 北京量子信息科学研究院
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