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Nitride semiconductor structure, nitride semiconductor device, and method for manufacturing device

A technology of nitride semiconductors and structures, applied in semiconductor/solid-state device manufacturing, semiconductor devices, chemical instruments and methods, etc., can solve problems such as no teaching

Pending Publication Date: 2022-05-17
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Patent Document 1 neither teaches epitaxial growth of a Group II-IV nitride semiconductor portion on a single-crystal Group III nitride semiconductor portion, nor does it teach any problems caused when a Group II-IV nitride semiconductor portion is epitaxially grown thereon. question

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  • Nitride semiconductor structure, nitride semiconductor device, and method for manufacturing device
  • Nitride semiconductor structure, nitride semiconductor device, and method for manufacturing device
  • Nitride semiconductor structure, nitride semiconductor device, and method for manufacturing device

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no. 1 approach

[0037] (1) Summary

[0038] will refer to figure 1 The nitride semiconductor structure 1 according to the first embodiment is described.

[0039] The nitride semiconductor structure 1 includes a Group III nitride semiconductor portion 3 and a Group II-IV nitride semiconductor portion 4 .

[0040] Group III nitride semiconductor portion 3 is a single crystal. Group III nitride semiconductor portion 3 contains group III elements. In this case, the group III element is an element selected from the group 13 elements of the periodic table. Specifically, the Group III element is an element selected from the group consisting of boron (B), aluminum (Al), gallium (Ga), indium (In), thallium (Tl), and nihonium ( Nh). The Group III nitride semiconductor contained in the Group III nitride semiconductor portion 3 is represented by the general formula A III N means that A III is a group III element.

[0041] Group II-IV nitride semiconductor portion 4 is also a single crystal. The ...

no. 2 approach

[0122] Next, we will refer to Figure 13 A nitride semiconductor structure 1b according to the second embodiment is described. In the following description, any constituent element of the nitride semiconductor structure 1b according to the present second embodiment that has the same function as the corresponding portion of the above-described nitride semiconductor structure 1 according to the first embodiment will be used for the corresponding portion are denoted by the same reference numerals, and descriptions thereof will be omitted herein.

[0123] The nitride semiconductor structure 1b includes a Group III nitride semiconductor portion 3b and a Group II-IV nitride semiconductor portion 4b instead of the Group III nitride semiconductor portion 3 and Group II-IV nitrogen semiconductor portion according to the first embodiment. Compound semiconductor part 4.

[0124] In the nitride semiconductor structure 1b according to the second embodiment, the Group III nitride semicond...

no. 3 approach

[0139] Next, we will refer to Figure 15 A nitride semiconductor structure 1c according to the third embodiment is described. In the following description, any constituent element of the nitride semiconductor structure 1c according to the present third embodiment having the same function as the corresponding portion of the above-mentioned nitride semiconductor structure 1 according to the first embodiment will be used for the corresponding portion are denoted by the same reference numerals, and descriptions thereof will be omitted in this section.

[0140] A nitride semiconductor structure 1c according to the third embodiment includes a Group III nitride semiconductor substrate 2c having a first main face 21c and a second main face 22c instead of the nitride semiconductor substrate according to the first embodiment. A single crystal silicon substrate 2 is a supporting substrate of the structure 1 . Group III nitride semiconductor substrate 2c has a wurtzite crystal structure...

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Abstract

The present invention achieves a structure including a single crystal group II-IV nitride semiconductor part on a single crystal group III nitride semiconductor part. A nitride semiconductor structure (1) is provided with a group III nitride semiconductor part (3) and a group II-IV nitride semiconductor part (4). The group III nitride semiconductor part (3) is a single crystal. The group III nitride semiconductor part (3) has a predetermined crystal surface. The group II-IV nitride semiconductor part (4) is provided on a predetermined crystal surface of the group III nitride semiconductor part (3). The group II-IV nitride semiconductor part (4) is a single crystal. The group II-IV nitride semiconductor part (4) contains a group II element and a group IV element. The group II-IV nitride semiconductor part (4) and the group III nitride semiconductor part (3) form a heterojunction. The predetermined crystal face is a crystal face other than a (0001) face.

Description

technical field [0001] The present disclosure generally relates to nitride semiconductor structures, nitride semiconductor devices, and methods for fabricating the nitride semiconductor devices. More specifically, the present disclosure relates to a nitride semiconductor structure including a Group III nitride semiconductor portion and a Group II-IV nitride semiconductor portion, a nitride semiconductor device including such a nitride semiconductor structure, and a method for fabricating the nitride semiconductor structure. A method for a nitride semiconductor device. Background technique [0002] Patent Document 1 teaches that in a light-emitting diode as a light-emitting device using a semiconductor layered structure, ZnGeN is formed between two layers of Group III nitride such as GaN 2 active layer. [0003] However, in the semiconductor layered structure of Patent Document 1, the Group III nitride layer is formed as a polycrystalline layer on the substrate. Patent Doc...

Claims

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Application Information

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IPC IPC(8): H01L29/267H01L29/04H01L29/78H01L29/778H01S5/30C30B29/38H01L21/02
CPCH01L29/267H01L29/045H01L29/78H01L29/778H01S5/30C30B29/38H01L21/02381H01L21/02458H01L21/02521H01L33/32H01L33/18H01L33/005H01S5/04257H01S5/22H01S5/327H01S2304/04H01S2304/12H01S2301/173H01S5/3214H01L21/0262H01L21/02639H01L21/02647H01L21/0265H01L21/02389H01L21/02433H01L21/0243H01L21/02488H01L21/02502H01L21/02579H01L21/02576H01L21/02494H01L21/02516H01L21/02609H01L33/002
Inventor 泷泽俊幸
Owner PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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