Check patentability & draft patents in minutes with Patsnap Eureka AI!

Superconducting nanowire single-photon detector with mid-infrared high-light absorption characteristic

A single-photon detector and superconducting nanowire technology, which is applied in the fields of semiconductor devices, climate sustainability, sustainable manufacturing/processing, etc., can solve the problems that it is difficult to ensure the flatness of the peak band of high light absorption rate at the same time, and achieve good Effect of in-band flatness

Pending Publication Date: 2022-05-24
XIAN UNIV OF TECH
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a superconducting nanowire single-photon detector with high light absorption characteristics in the mid-infrared, which solves the problem that it is difficult to simultaneously ensure high peak light absorption rate and better light absorption efficiency in the design of the detector broadband light absorption efficiency in the prior art. The problem of in-band flatness

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Superconducting nanowire single-photon detector with mid-infrared high-light absorption characteristic
  • Superconducting nanowire single-photon detector with mid-infrared high-light absorption characteristic
  • Superconducting nanowire single-photon detector with mid-infrared high-light absorption characteristic

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.

[0021] The invention has a superconducting nanowire single-photon detector with mid-infrared high light absorption characteristics, uses NbN nanowires, silicon dioxide cavity and DBR to construct an asymmetric F-P cavity structure, and designs two types of single-layer NbN and double-layer NbN nanowires structure, the detector structure M1 when a single-layer niobium nitride nanowire is used, such as figure 1 As shown, it includes NbN nanowires, silicon dioxide cavity, distributed Bragg mirror, and 400 μm thick BK7 glass substrate arranged in sequence from top to bottom; when using double-layer NbN nanowires, the detector structure M2 is shown as figure 2 As shown, it includes niobium nitride nanowires, silicon dioxide isolation layers, niobium nitride nanowires, silicon dioxide cavities, distributed Bragg mirrors, and a 400 μm thick BK7 glass...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
widthaaaaaaaaaa
Login to View More

Abstract

The superconducting nanowire single-photon detector with the mid-infrared high-light absorption characteristic comprises a nanowire layer, a silicon dioxide cavity, a distributed Bragg reflector and a substrate which are sequentially arranged from top to bottom, and the nanowire layer adopts a single-layer NbN nanowire or a double-layer NbN nanowire. Then, the minimum value of the light absorptivity within the wavelength range of 3-5 microns is used as a target function, optimal solutions of the thicknesses of the silicon dioxide cavity, the high-refractive-index film of the DBR and the low-refractive-index film of the DBR in the initial structure are sought through particle swarm optimization / PSO, and SNSPD design with the 3-5 microns broadband high light absorptivity and the good in-band flatness characteristic is achieved. When incident light enters vertically, in a target wavelength range of 3-5 microns, the minimum value of the light absorptivity of the optimized single-layer NbN nanowire structure is 0.526, the maximum value of the light absorptivity of the optimized single-layer NbN nanowire structure is 0.779, and the in-band flatness can be as low as 0.253; the minimum value and the maximum value of the double-layer NbN nanowire structure respectively reach 0.748 and 0.974, and the in-band flatness can be as low as 0.226.

Description

technical field [0001] The invention belongs to the technical field of infrared photoelectric detectors, and relates to a superconducting nanowire single-photon detector with mid-infrared high light absorption characteristics. Background technique [0002] Superconducting nanowire single-photon detectors / SNSPDs have been rapidly developed and widely used in the past two decades due to their low dark count, wide response spectrum, small time jitter, and fast repetition speed. In various related cutting-edge technology fields, such as long-distance quantum communication, single-photon imaging, etc. With the continuous emergence of new demands, the research on the photon response mechanism and polarization-insensitive structure design of SNSPD is also deepening. The SNSPD with high detection efficiency in the mid-infrared is receiving more and more attention because of its important application value in such fields as spectral analysis and astronomical observation. [0003] T...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0232H01L31/0352
CPCH01L31/035227H01L31/02327Y02P70/50
Inventor 赵雨辰田浩刘江凡宋忠国席晓莉
Owner XIAN UNIV OF TECH
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More