Silicon-on-insulator LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor with multiple triangular buried layers

Abstract

The invention discloses a silicon-on-insulator LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor with a plurality of triangular buried layers. A fully buried oxide layer is arranged on a substrate layer; a silicon film layer is arranged on the fully buried oxide layer; the silicon film layer comprises a source region, a silicon body, a drift region, a drain region and a plurality of triangular buried oxide layers; the source region and the silicon body are located at one side of the silicon film layer, the silicon body surrounds the source region, and the source region is located at the top of the silicon film layer; the drain region is located at the top of the other side of the silicon film layer; a region among the drain region, the silicon body and the plurality of triangular buried oxide layers is a drift region; the plurality of triangular buried oxide layers are positioned above the fully buried oxide layer; the channel is provided by a silicon body between the source region and the drift region; the gate oxide layer is positioned above the channel and the drift region; the extended oxide layer is positioned above the drift region; two adjacent side surfaces of the extended oxide layer and the gate oxide layer are in contact; the gate oxide layer is completely covered by the gate electrode, and the extended oxide layer is partially covered by the gate electrode; the source electrode is located above the source region, and the drain electrode is located above the drain region. According to the invention, the breakdown voltage and the on-resistance performance are more excellent.

Description

technical field [0001] The invention belongs to the field of devices for semiconductor high-voltage power integrated circuits, and in particular relates to a silicon-on-insulator (Silicon-On-Insulator, SOI) substrate with multiple triangular buried oxide layers (Multiple Triangle Buried Oxide Layer, MTBOX) at the same time. The Lateral Double-diffused Metal-Oxide-Semiconductor (LDMOS) transistor is a silicon-on-insulator transistor (Multiple Triangle Buried Oxide Layers SOI LDMOS, MTBOX SOI LDMOS) with multiple triangular buried layers. Background technique [0002] With the development of semiconductor process technology and power integrated circuits, the demand for high-voltage and high-power semiconductor devices in the society is increasing day by day, and the society's performance requirements are getting higher and higher, so the improvement of the performance of high-voltage devices has become particularly important. The function of increasing the buried oxide layer i...

AI Technical Summary

Problems solved by technology

However, the structure of the existing silicon LDMOS transistor on the insulating layer still has room for further improvement, and its breakdown voltage and on-resistance performance need to be further improved.

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