High-performance PZT modified piezoelectric ceramic prepared at low temperature

A piezoelectric ceramic and piezoelectric ceramic sheet technology, applied in the field of piezoelectric ceramic materials, can solve the problems of deterioration of the electrical properties of ceramics, affecting the reliability of multi-layer devices, etc., and achieve the effects of good piezoelectric properties and low sintering temperature

Pending Publication Date: 2022-06-03
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional PZT piezoelectric ceramics are sintered at a high temperature of about 1200 °C, so the internal electrodes cannot use pure Ag (melting point ≈961 °C) at such a high temperature, and the Ag-Pd electrode layer will also diffuse into the ceramic layer, resulting in ceramic Deterioration of electrical properties, thereby affecting the reliability of multilayer devices

Method used

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  • High-performance PZT modified piezoelectric ceramic prepared at low temperature
  • High-performance PZT modified piezoelectric ceramic prepared at low temperature
  • High-performance PZT modified piezoelectric ceramic prepared at low temperature

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] The XRD patterns of the prepared high-performance PZT modified piezoelectric ceramics prepared at low temperature are shown in figure 1 , figure 1 It is shown that the PZT piezoelectric ceramic is a pure perovskite phase; the ZJ-3 type quasi-static state of the Institute of Acoustics, Chinese Academy of Sciences is used. d 33 meter, the measured piezoelectric coefficient of d 33 See image 3 , which is 322 pC / N; the change of dielectric constant with temperature was measured by using Agilent 4980A precision impedance meter connected to a temperature-controlled furnace, which can be obtained from Figure 4 The Curie temperature of the obtained sample was 171 °C.

Embodiment 2

[0021] The XRD patterns of the prepared high-performance PZT modified piezoelectric ceramics prepared at low temperature are shown in figure 1 , figure 1 It is shown that the PZT piezoelectric ceramic is a pure perovskite phase; the ZJ-3 type quasi-static state of the Institute of Acoustics, Chinese Academy of Sciences is used. d 33 meter, the measured piezoelectric coefficient of d 33 See image 3 , which is 513 pC / N; the change of dielectric constant with temperature was measured by using Agilent 4980A precision impedance meter connected to a temperature-controlled furnace, which can be obtained from Figure 4 The Curie temperature of the obtained sample was 178 °C.

Embodiment 3

[0023] The XRD patterns of the prepared high-performance PZT modified piezoelectric ceramics prepared at low temperature are shown in figure 1 , figure 1 It is shown that the PZT piezoelectric ceramic is a pure perovskite phase; the ZJ-3 type quasi-static state of the Institute of Acoustics, Chinese Academy of Sciences is used. d 33 meter, the measured piezoelectric coefficient of d 33 See image 3 , which is 608 pC / N; the change of dielectric constant with temperature was measured by using Agilent 4980A precision impedance meter connected to a temperature-controlled furnace, which can be obtained from Figure 4 The Curie temperature of the obtained sample was 173 °C. Its SEM image see figure 2 , showing that the grain size is uniform and the grains are relatively dense.

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Abstract

The general formula of the piezoelectric ceramic is Pb1xyLixCayTauu [(Ni, Zn) 1 / 3Nb2 / 3] v (Mg1 / 2W1 / 2) w (Ti, Zr) 1uvwO3, x is greater than or equal to 0.1 and less than or equal to 0.5, y is greater than or equal to 0.1 and less than or equal to 0.5, u is greater than or equal to 0.1 and less than or equal to 0.9, v is greater than or equal to 0.01 and less than or equal to 0.10, and w is greater than or equal to 0.01 and less than or equal to 0.10. PZT modified piezoelectric ceramic powder sintered at the low temperature of 850-950 DEG C is prepared by adopting a solid-phase reaction method, and then the ceramic material is prepared through the processes of granulation, tabletting, glue discharging, sintering, silver firing, polarization and the like. Results show that the PZT modified ceramic material prepared at the sintering temperature of 850-950 DEG C is compact in crystal grains, uniform in crystal grains, sufficient in crystallization and obvious in liquid-phase sintering characteristic, and the piezoelectric property is greatly improved.

Description

technical field [0001] The field of the invention belongs to the field of piezoelectric ceramic materials, in particular to a high-performance PZT modified piezoelectric ceramic prepared at low temperature. Background technique [0002] PZT is a traditional piezoelectric ceramic with good dielectric, ferroelectric, piezoelectric, pyroelectric and other effects. Its raw materials are cheap and suitable for factory production. Its modification can obtain ceramics suitable for various purposes. Material. Multilayer piezoelectric ceramics have alternating ceramic layers and inner metal electrode layers. With the rapid development of science and technology, multilayer piezoelectric ceramics have been more and more widely studied, and are widely used in actuators, converters, and sensors. Ag-Pd electrodes are generally used for the inner electrodes of multilayer ceramics, and their co-firing temperature ranges from 920 to 980 °C, while the inner electrodes of pure Ag require a s...

Claims

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Application Information

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IPC IPC(8): C04B35/493C04B35/622C04B35/638C04B41/88
CPCC04B35/493C04B35/622C04B35/638C04B41/88C04B41/5116C04B2235/3203C04B2235/3208C04B2235/3279C04B2235/3284C04B2235/3251C04B2235/3255C04B2235/3206C04B2235/326C04B2235/6567C04B41/4539C04B41/0072
Inventor 刘洪陈浩朱建国
Owner SICHUAN UNIV
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