Power MOSFET device and manufacturing method thereof
A device and power technology, applied in the field of MOSFET devices and their manufacturing, can solve the problem that it is difficult to further improve the withstand voltage of the device terminal area, and achieve the effects of improving processing reliability, avoiding wafer warpage, and improving withstand voltage.
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Embodiment 1
[0037] Refer to appendix Figure 1 , the present invention discloses a power MOSFET device, the power MOSFET device is divided into an active region 100 and a terminal region 101, comprising a drain metal 01, the drain metal 01 is provided with a first conductive type substrate 02, the first conductive type substrate 02 is provided with a first conductive type epitaxial layer 03, the first conductive type epitaxial layer 03 is provided on the first conductive type epitaxial layer 03 is provided with a second conductive type epitaxial layer 04, In the active region 100 of the first conductive type epitaxial layer 03 and the second conductive type epitaxial layer 04 is provided with a first conductive type well region 14.
[0038]In the epitaxial layer of the first conductive type and the epitaxial layer of the second conductive type 04 is provided with a first type groove 07 and a second type groove 10 composed of an insulating material such as silicon dioxide, the first type of gro...
Embodiment 2
[0042] A method for producing a power MOSFET device, including the following steps:
[0043] Step 1: Select the first conductive type substrate 02 material and epitaxially grow the first conductive type epitaxial layer 03 on its surface;
[0044] Step two: Using a mask window, selectively inject the first conductive type ions into the active region 100 on the surface of the first conductive type epitaxial layer 03 to form the first conductive type well region 14;
[0045] Step three: The surface epitaxial layer 03 of the first conductive type is formed by the surface epitaxial layer 04, the first conductive type well region 14 due to the high temperature diffusion of the epitaxial type 04 into the epitaxial layer 04 of the second conductive type;
[0046] Step four: Selectively etch out the first class groove of the active region 100 and the second type of groove 101 of the second type of trench 101 on the upper surface of the epitaxial layer 03 of the second conductive type 03;
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