Preparation device and method of silicon composite material
A technology of silicon composite material and preparation device, applied in metal material coating process, electrode manufacturing, vapor deposition manufacturing, etc., can solve the problems of poor controllability of coating thickness, easy formation of bubbles, and different effects of fluidization quality improvement. , to achieve the effect of improving cycle performance and rate performance, and improving uniformity
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[0054] The second aspect of the present invention provides a preparation method of a silicon composite material, which is carried out in any of the above-mentioned devices, and includes the following steps:
[0055] The silicon material is placed at the bottom of the reaction unit 2 near the gas inlet 1, and the gas is input from the gas inlet 1 into the reaction unit 2, and the gas entering the reaction unit 2 undergoes a cracking reaction, and promotes the fluidization of the silicon material, while the particle agglomerates and The bubbles formed by the gas are gradually broken by the crushing unit 3 to form a high-quality gas-solid fluid state. The high-quality fluidized silicon material particles react with the cracked elemental substance, and coat the surface of the silicon material to form a silicon composite material, while the The unreacted gas flows out from the gas outlet 6 after being separated by the separation baffle 4 and the cyclone 5, while the particulate matt...
Embodiment 1
[0061] This embodiment adopts the figure 1 The device shown is provided with 2 crushing units, each crushing unit includes 4 crushing members, and the included angle α=90° between the crushing member in the first crushing unit and the crushing member in the second crushing unit, and the crushing member has figure 2 The structure shown includes a first upper baffle and a first lower baffle that are connected to each other and a second upper baffle and a second lower baffle that are connected to each other. The first upper baffle and the second upper baffle are arranged in parallel, The angle between the first lower baffle and the second lower baffle is 60°; the guide tube has a heat exchange function, and the ratio of the total area of the upper through hole 16 to the total area of the first upper baffle and the second upper baffle is 6%; the ratio of the total area of the lower through holes 15 to the total area of the first lower baffle and the second lower baffle is...
Embodiment 2
[0066] The device used in this embodiment can refer to Embodiment 1, the difference is that: the ratio of the total area of the upper through holes to the total area of the first upper baffle and the second upper baffle is 8%; The ratio of the total area of the first baffle and the second lower baffle was 2%. The vertical distance between the first upper baffle and the second upper baffle is 180mm; the height of the first upper baffle and the second upper baffle is 180mm.
[0067] The reaction temperature in the fluidized bed reaction device is 850°C, the reaction pressure (gauge pressure) is 0.02Mpa, the carbon source is a mixture of methane, ethylene and propylene, and nitrogen source and inert gas are introduced at the same time, and the average particle size of the silicon-based material is 100nm .
[0068] The content of nitrogen doping in the silicon composite material was detected. After testing, the nitrogen doping content was 2.08wt%, indicating that nitrogen w...
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Abstract
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