Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor structure and forming method thereof

A technology of semiconductor and gate structure, applied in the field of semiconductor structure and its formation, can solve the problems of poor performance of semiconductor structure, achieve the effect of improving performance and reducing etching damage

Pending Publication Date: 2022-06-24
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, semiconductor structures formed by existing methods have poor performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0049] As mentioned in the background, semiconductor structures have poor performance.

[0050] The following detailed description will be given in conjunction with the accompanying drawings, the reasons for the poor performance of the semiconductor structure, figure 1 It is a schematic diagram of a semiconductor structure.

[0051] It should be noted that the "surface" and "upper" in this specification are used to describe the relative positional relationship in space, and are not limited to whether they are in direct contact.

[0052] First, the reasons for the poor performance of the existing semiconductor structure are described in detail with reference to the accompanying drawings. figure 1 to Figure 5 It is a structural schematic diagram of each step of a method for forming a conventional semiconductor structure.

[0053] Please refer to Figure 1 to Figure 3 , figure 2 for figure 1 Schematic cross-section along the tangential direction of A-A1, image 3 for...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a semiconductor structure and a forming method thereof, and the method comprises the steps: providing a substrate which comprises effective regions and an isolation region which are arranged in a first direction, the effective regions are located at the two sides of the isolation region and are adjacent to the isolation region, the substrate is provided with a first fin part and a second fin part parallel to the first fin part, the first fin part and the second fin part are different in conduction type, the first fin part stretches across the effective region and the isolation region, and the second fin part is located on the surface of the effective region; forming a first gate structure on the isolation region, wherein the first gate structure stretches across the first fin part; and forming an isolation structure between the adjacent first gate structures, wherein a part of the isolation structure is located in the first fin part. The semiconductor structure formed by the method is good in performance.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] As the integration level of semiconductor devices increases, the critical dimensions of transistors continue to shrink. However, as the size of the transistor decreases sharply, the thickness of the gate dielectric layer and the operating voltage cannot be changed accordingly, which makes it more difficult to suppress the short channel effect and increases the channel leakage current of the transistor. [0003] The gate of the Fin Field-Effect Transistor (FinFET) has a forked 3D structure similar to a fish fin. The channel of the FinFET protrudes from the surface of the substrate to form a fin, and the gate covers the top surface and side walls of the fin, so that the inversion layer is formed on each side of the channel, which can control the connection of the circuit with ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/423H01L21/336
CPCH01L29/66803H01L29/785H01L29/42356
Inventor 邱晶涂武涛陈建王彦
Owner SEMICON MFG INT (SHANGHAI) CORP