Chemical mechanical polishing solution and use method thereof
A chemical machinery, polishing liquid technology, applied in water-based dispersants, electrical components, circuits, etc., can solve problems such as weakening mechanical strength, and achieve the effect of good repair and control capabilities
Pending Publication Date: 2022-07-01
ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
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Problems solved by technology
In order to reduce this effect, it is necessary to use a low dielectric constant (low k) insulating material to reduce the parasitic capacitance between adjacent metal lines. Since the mechanical strength of the low dielectric constant material becomes weak, the introduction of this material gives Process technology, especially the chemical mechanical polishing process (CMP) brings great challenges
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[0026] The advantages of the present invention are further described below with reference to specific embodiments.
[0027] Table 1 shows the components and contents of the polishing liquids of Comparative Examples 1-2 and Examples 1-17. According to the formula given in Table 1, mix the other components except the oxidant evenly, use KOH or HNO 3 Adjust to the desired pH. Add oxidant before use and mix well. Deionized water is the balance.
[0028] Table 1 Components and contents of the polishing liquids of Comparative Examples 1-2 and Examples 1-17
[0029]
[0030]
[0031]
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The invention provides a chemical mechanical polishing solution for flattening a barrier layer and a use method of the chemical mechanical polishing solution. The chemical mechanical polishing solution comprises grinding particles, a metal corrosion inhibitor, a complexing agent, an oxidizing agent, a surfactant and water, wherein the surfactant is one or more fatty alcohol derivatives. The chemical mechanical polishing solution can meet the requirements for the polishing rate and the selection ratio of various materials in the barrier layer polishing process, and has good repair and control ability for different degrees of disc-shaped recesses after previous copper polishing.
Description
technical field [0001] The present invention relates to the field of chemical mechanical polishing, in particular to a chemical mechanical polishing solution for planarizing a barrier layer and a method for using the same. Background technique [0002] In the manufacture of integrated circuits, the standards of interconnection technology are improving. With the increase of interconnection layers and the reduction of process feature size, the requirements for the surface flatness of silicon wafers are getting higher and higher. If there is no flattening ability, The creation of complex and dense structures on semiconductor wafers is very limited, and the chemical mechanical polishing process, CMP, is the most efficient method for planarizing the entire silicon wafer. [0003] The CMP process uses an abrasive-containing mixture to polish the surface of an integrated circuit. In a typical chemical mechanical polishing method, the substrate is brought into direct contact with a...
Claims
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Login to View More IPC IPC(8): C09G1/04H01L21/02
CPCC09G1/04H01L21/02013
Inventor 倪宇飞荆建芬周靖宇姚颖周文婷刘天奇杨俊雅蔡鑫元常宾唐浩杰
Owner ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD