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Quantum dot light emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of insignificant aging effect of QLED devices, and is conducive to charge injection balance and suppression of surface exciton quenching. , enhance the effect of positive aging effect

Pending Publication Date: 2022-07-01
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of this application is to provide a quantum dot light-emitting diode and its preparation method, aiming to solve the problem that the positive aging effect on blue and red QLED devices is not obvious when using saturated / unsaturated carboxylic acid and other active materials to encapsulate the device

Method used

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  • Quantum dot light emitting diode and preparation method thereof
  • Quantum dot light emitting diode and preparation method thereof
  • Quantum dot light emitting diode and preparation method thereof

Examples

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preparation example Construction

[0067] like figure 2 As shown, the first method for preparing a quantum dot light-emitting diode includes the following steps:

[0068] S01. Provide a prefabricated device, the prefabricated device includes a cathode substrate, and an electronic functional layer combined on the cathode of the cathode substrate;

[0069] S02. use active material solution to clean the electronic functional layer, wherein, the active material in the active material solution is selected from organic hydrocarbons with at least one hydrogen atom substituted by carboxyl groups, organic esters containing carbon-carbon double bonds or carbon-carbon triple bonds or benzene rings and at least one of unsaturated ketones;

[0070] S03. Prepare a quantum dot light-emitting layer on the surface of the electronic functional layer away from the cathode substrate, and prepare an anode on the surface of the quantum dot light-emitting layer away from the electronic functional layer.

[0071] In the above step ...

Embodiment 1

[0117] like Figure 5 As shown, a red quantum dot light-emitting diode, a substrate 100, a cathode 110 and an anode 160 located on the substrate 100, and an electron functional layer 120, a quantum dot light-emitting layer 130, and a hole functional layer 150 are stacked in sequence, wherein , the substrate 100 is a glass substrate, the material of the cathode 110 is ITO, the material of the electron functional layer 120 is ZnO, the material of the quantum dot light-emitting layer 130 is CdZnSe / ZnSe / ZnS, the material of the hole function layer 150 is TFB, and the material of the electron functional layer 150 is TFB. The surface of the functional layer 120 adjacent to the quantum dot light-emitting layer 130 is treated with acrylic acid, and the material of the anode 160 is Ag.

[0118] A preparation method of a quantum dot light-emitting diode, comprising:

[0119] On the cathode substrate, spin-coating the electronic functional material to prepare the electronic functional la...

Embodiment 2

[0124] A red quantum dot light-emitting diode with the same composition and material as Example 1, the difference lies in the manner of "the surface of the electronic functional layer 120 is treated with acrylic acid". Specifically, the method of “the surface of the electronic functional layer 120 is treated with acrylic acid” in Example 2 is:

[0125] The resulting prefabricated device was placed in N 2 Or in an atmosphere composed of Ar and acrylic vapor for 20 minutes, the surface of the electronic functional layer 120 is treated with acrylic acid; wherein, the volume of acrylic acid accounts for 30% of the total gas volume; the temperature of the gaseous environment is 80 ° C and the total pressure is 1 MPa .

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Abstract

The invention relates to the technical field of display, and provides a quantum dot light emitting diode and a preparation method thereof. The quantum dot light-emitting diode comprises an anode and a cathode which are oppositely arranged, a quantum dot light-emitting layer arranged between the anode and the cathode, and an electronic function layer arranged between the quantum dot light-emitting layer and the cathode. The surface, adjacent to the quantum dot light-emitting layer, of the electronic functional layer is treated by an active material, or an interface layer is arranged between the electronic functional layer and the quantum dot light-emitting layer, and the material of the interface layer contains the active material. Wherein the active material is selected from at least one of organic hydrocarbon with at least one hydrogen atom substituted by carboxyl, organic ester containing a carbon-carbon double bond or a carbon-carbon triple bond or a benzene ring, and unsaturated ketone. According to the invention, the active material is introduced into the quantum dot light-emitting layer, so that the positive aging effect of the quantum dot light-emitting diode is improved.

Description

technical field [0001] The invention belongs to the technical field of display, and in particular relates to a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Quantum Dot Light Emitting Diodes (QLED) are electroluminescent devices based on quantum dots (QDs) technology. A series of excellent characteristics such as flexible panels, good temperature characteristics, fast response speed, energy saving and environmental protection have become the research hotspot and key development direction of new display technology. [0003] Although QLED devices borrow and utilize the structure of organic light-emitting diodes (Organic Light-Emitting Diode, OLED), due to the difference in material composition, the aging phenomenon and aging mechanism of the two are very different. For example, QLED devices have various efficiencies (current, power or external quantum efficiency) that decay or increase over time, namely "negative aging effect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K30/865H10K50/115H10K50/16H10K71/00
Inventor 王劲杨一行曹蔚然
Owner TCL CORPORATION
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