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Wide-band-gap perovskite thin film, solar cell and preparation method of wide-band-gap perovskite thin film

A solar cell and perovskite technology, applied in the field of solar cells, can solve the problems of solar cell stability and low efficiency, and achieve beneficial effects of excellent efficiency and stability, excellent photoelectric conversion characteristics, and light work stability

Pending Publication Date: 2022-07-05
CHINA THREE GORGES CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Therefore, the technical problem to be solved in the present invention is to overcome the defects of low stability and efficiency of wide bandgap perovskite solar cells in the prior art, thereby providing a wide bandgap perovskite thin film, solar cell and preparation method thereof

Method used

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  • Wide-band-gap perovskite thin film, solar cell and preparation method of wide-band-gap perovskite thin film
  • Wide-band-gap perovskite thin film, solar cell and preparation method of wide-band-gap perovskite thin film
  • Wide-band-gap perovskite thin film, solar cell and preparation method of wide-band-gap perovskite thin film

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Embodiment 1

[0056] The present embodiment provides a method for preparing a solar cell, comprising the following steps:

[0057] (1) Cleaning the ITO substrate: ultrasonically cleaned with detergent, deionized water, ethanol and isopropanol for 15 min each. Washed substrate with N 2 Dry with an air gun, put it in a watch glass, and treat it with UV-ozone cleaning equipment for 20 min before use.

[0058] (2) Preparation of hole transport layer: The ozone-treated ITO substrate was placed on the rotating bracket of the spin coater and fixed by vacuum adsorption. The hole transport material PTAA (poly[bis(4-phenyl)(2, 4,6-trimethylphenyl)amine]) and chlorobenzene solution were mixed at a mass-volume ratio of 2 mg: 1 mL to obtain a PTAA solution. The PTAA solution was dropped in the center of the ITO substrate and the spin coater was started at 3000 rpm for 30 s. Spin-coated on the ITO substrate, each 30 μL of PTAA solution corresponds to an area of ​​1 × 1 cm of the ITO substrate 2 ; Then...

Embodiment 2

[0064] The present embodiment provides a method for preparing a solar cell, comprising the following steps:

[0065] (1) Cleaning the ITO substrate: ultrasonically cleaned with detergent, deionized water, ethanol and isopropanol for 15 min each. Washed substrate with N 2 Blow dry with an air gun, put it in a watch glass, and treat it with UV-ozone cleaning equipment for 20 min before use.

[0066] (2) Preparation of hole transport layer: The ozone-treated ITO substrate was placed on the rotating bracket of the spin coater and fixed by vacuum adsorption. The hole transport material PTAA and chlorobenzene solution were mixed in a mass-volume ratio of 2 mg: 1 mL. To obtain PTAA solution, drop the PTAA solution on the center of the ITO substrate and start the spin coater to spin on the ITO substrate at a speed of 3000rpm for 30s. Each 30μL of PTAA solution corresponds to an area of ​​1×1 cm of the ITO substrate. 2 ; Then the sample was moved to a heating stage at 100 °C and anne...

Embodiment 3

[0072] The present embodiment provides a method for preparing a solar cell, comprising the following steps:

[0073] (1) Cleaning the ITO substrate: ultrasonically cleaned with detergent, deionized water, ethanol and isopropanol for 15 min each. Washed substrate with N 2 Blow dry with an air gun, put it in a watch glass, and treat it with UV-ozone cleaning equipment for 20 min before use.

[0074] (2) Preparation of hole transport layer: The ozone-treated ITO substrate was placed on the rotating bracket of the spin coater and fixed by vacuum adsorption. The hole transport material PTAA and chlorobenzene solution were mixed in a mass-volume ratio of 2 mg: 1 mL. To obtain the PTAA solution, drop the PTAA solution on the center of the ITO substrate and start the spin coater to spin on the ITO substrate at a speed of 3000 rpm for 30 s. Each 30 μL of PTAA solution corresponds to an area of ​​1 × 1 cm of the ITO substrate. 2 ; Then the sample was moved to a heating stage at 100 °C...

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Abstract

The invention discloses a wide-band-gap perovskite thin film, a solar cell and a preparation method thereof, belongs to the technical field of solar cells, and overcomes the defects of low stability and efficiency of a wide-band-gap perovskite solar cell in the prior art. According to the preparation method of the two-dimensional / three-dimensional hybrid wide-band-gap perovskite thin film, [NH3 (CH2) nNH3] I2 is dissolved in a perovskite precursor solution, spin coating and heating treatment are carried out, and n is equal to 4, 6 or 8; in the perovskite precursor solution, the total molar concentration of a perovskite precursor is 1.0 mol / L to 2.5 mol / L, and the doping amount of [NH3 (CH2) nNH3] I2 is 1 mg / mL to 15 mg / mL. The method is suitable for preparing the two-dimensional / three-dimensional hybrid wide-band-gap perovskite thin film and the solar cell.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a wide-bandgap perovskite thin film, a solar cell and a preparation method thereof. Background technique [0002] In the past decade, perovskite solar cells have developed rapidly, and the energy conversion efficiency of single-cell perovskite solar cells has rapidly increased from the initial 3.8% to the currently certified 25.7%. Building a tandem battery is the most effective way to greatly improve battery efficiency. The theoretical efficiency of a double-junction tandem battery can reach 45%, which is much higher than that of a single-junction battery. S-Q The ultimate efficiency is 33%. With the rapid increase in the efficiency of perovskite / crystalline silicon tandem solar cells, wide-bandgap (1.63-1.75 eV) perovskite cells are becoming the focus of research in both academia and industry. [0003] Compared with other lower bandgap (<1.6 eV) perovskites...

Claims

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Application Information

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IPC IPC(8): H01L51/48H01L51/42H01L51/44
CPCH10K71/12H10K71/40H10K85/30H10K30/152H10K30/15H10K30/10H10K30/88Y02E10/549
Inventor 杨静代慧涛刘冬雪宋宗龙刘永胜孙天歌董一昕尚子雅
Owner CHINA THREE GORGES CORPORATION
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