Ion source device with adjustable plasma density

Abstract

The invention discloses an ion source device with adjustable plasma density. The ion source device comprises a discharge cavity, a spiral coil and an ion source cavity which are coaxially arranged in sequence from inside to outside, the metal foil is arranged on the outer wall surface of the discharge cavity and can shield the magnetic field intensity of the inner edge of the discharge cavity and neutralize high plasma density caused by the skin effect, so that the plasma density distribution in the discharge cavity is uniform. The width W of the metal foil ranges from 1 mm to 20 mm, the thickness T of the metal foil ranges from 0.1 mm to t, and t is the skin depth; and selecting the thickness T and the surface area of the metal foil according to the difference between the edge plasma density and the central region plasma density in the discharge cavity. The Faraday structure is additionally arranged outside the discharge cavity, power distribution is carried out on the Faraday structure, plasma density adjustment is carried out according to different working conditions, and therefore the etching uniformity is effectively improved.

Description

technical field [0001] The invention relates to the field of ion beam etching, in particular to an ion source device with adjustable plasma density. Background technique [0002] Ion beam etching can be used to etch and process various metals (Ni, Cu, Au, Al, Pb, Pt, Ti, etc.) and their alloys, as well as non-metals, oxides, nitrides, carbides, semiconductors, polymers , ceramics, infrared and superconducting materials. In principle, the argon gas is decomposed into argon ions by the principle of glow discharge, and the argon ions are accelerated by the anode electric field to physically bombard the surface of the sample to achieve the effect of etching. In the etching process, Ar gas is charged into the discharge chamber of the ion source and ionized to form a plasma, and then the ions are extracted and accelerated by the grid, and the ion beam with a certain energy enters the working chamber and shoots towards the solid surface to bombard the solid. Surface atoms make ma...

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Problems solved by technology

The existing method is to use apertures of different specifications on the screen grid to solve this problem, but it can only be improved for certain working conditions, and multi-working conditions cannot be adjusted, which affects the uniformity of etching

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