Solar blind ultraviolet detector based on amorphous Ga2O3 film and preparation method thereof

Abstract

The invention belongs to the field of deep ultraviolet detection, relates to a solar-blind ultraviolet detector, and particularly provides a solar-blind ultraviolet detector based on an amorphous Ga2O3 film and a preparation method of the solar-blind ultraviolet detector. The novel structure that the interdigital electrode is arranged on the substrate and the amorphous Ga2O3 thin film layer directly covers the substrate and the electrode is adopted, compared with an existing structure that the amorphous Ga2O3 thin film layer is arranged on the substrate and the interdigital electrode is arranged on the amorphous Ga2O3 thin film layer, the possibility that an a-Ga2O3 thin film is polluted in the later manufacturing process of the device can be eliminated, and the reliability of the device is improved. The interface state of the material is improved, and the influence on the performance of the device due to defects generated at the interface is reduced to the greatest extent; good surface appearance is maintained, and adverse effects of photoresist on the optical performance of the material are avoided; meanwhile, the trans-structure is beneficial to short-distance transmission of charges, loss of the charges in the transmission process is avoided, and the response time of the device is prolonged. In conclusion, the amorphous Ga2O3 solar blind ultraviolet detector provided by the invention has the advantages of high responsivity and short response time.

Description

technical field [0001] The invention belongs to the field of deep ultraviolet detection, relates to a solar-blind ultraviolet detector, and specifically provides a 2 O 3 Thin-film solar-blind ultraviolet detector and preparation method thereof. Background technique [0002] Over the past few years, most Ga 2 O 3 Solar blind photodetectors are based on β-Ga 2 O 3 Monoclinic wafers, epitaxially grown on sapphire substrates by molecular beam epitaxy (MBE), chemical vapor deposition (CVD), or pulsed laser deposition (PLD) processes; solar-blind photodetection properties mainly depend on β-Ga 2 O 3 The crystalline quality of thin films is affected by the substrate hotspot array matching, growth temperature, deposition rate, and annealing conditions. based on β-Ga 2 O 3 Thin-film photodetectors can be achieved by β-Ga 2 O 3 Oxygen vacancies were introduced into the films to achieve high responsivity; however, the presence of oxygen vacancies also resulted in response ti...

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Problems solved by technology

Based on β-Ga 2 o 3 In thin-film photodetectors, the β-Ga 2 o 3 Oxygen vacancies were introduced into the film to achieve high response rates; however, the presence of oxygen vacancies also resulted in response times as high as several seconds; in addition, β-Ga 2 o 3 The formation of the monoclinic phase requires high processing temperatures (>650°C), leading to a sharp increase in the thermal budget and limiting the choice of substrates

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