Silicon carbide rod with low oxidation degree under high-temperature condition
A technology of oxidation degree and silicon carbon rod, which is applied in the field of silicon carbon rod, can solve the problems of easy aging and low oxidation degree, and achieve the effects of good heat transfer, improved thermal conductivity and good oxidation resistance
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Embodiment 1
[0040] S1: in parts by weight, mix and stir 70 parts of silicon carbide, 1 part of boron carbide, 3 parts of molybdenum disilicide, and 10 parts of resin glue, and then add a small amount of water and stir to obtain a mixture; add the mixture to the press Pressing to obtain a billet;
[0041] S2: heating and drying the pressed billet for 8 hours, and then sintering at a high temperature for 40 minutes under the protection of argon gas after drying to obtain a matrix;
[0042] S3: Add an appropriate amount of anhydrous ethanol to 5 parts of silica sol, then add 20 parts of silicon powder to it, stir evenly, coat the surface of the substrate, heat and dry for 1 hour, and then perform heat treatment at high temperature. A silica protective film was formed on the surface to obtain a heating element.
Embodiment 2
[0044] S1: in parts by weight, mix and stir 75 parts of silicon carbide, 2 parts of boron carbide, 4 parts of molybdenum disilicide, and 13 parts of resin glue, then add a small amount of water and stir to obtain a mixture; add the mixture to the press Pressing to obtain a billet;
[0045] S2: heating and drying the pressed billet for 8.5 hours, and then sintering at high temperature for 50 minutes under the protection of argon gas after drying to obtain a matrix;
[0046] S3: Add an appropriate amount of anhydrous ethanol to 5.5 parts of silica sol, and then add 22 parts of silicon powder to it, stir evenly, coat the surface of the substrate, heat and dry for 1 hour, and then perform heat treatment at high temperature. A silica protective film was formed on the surface to obtain a heating element.
Embodiment 3
[0048] S1: in parts by weight, mix and stir 80 parts of silicon carbide, 3 parts of boron carbide, 5 parts of molybdenum disilicide, and 15 parts of resin glue, then add a small amount of water and stir to obtain a mixture; add the mixture to the press Pressing to obtain a billet;
[0049] S2: heating and drying the pressed billet for 9 hours, and then sintering at high temperature for 60 minutes under the protection of argon gas after drying to obtain a matrix;
[0050] S3: Add an appropriate amount of anhydrous ethanol to 6 parts of silica sol, and then add 24 parts of silicon powder to it, stir evenly, coat the surface of the substrate, heat and dry for 1 hour, and then perform heat treatment at high temperature. A silica protective film was formed on the surface to obtain a heating element.
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