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Image sensor and electronic information device

An image sensor and photoelectric technology, applied in the field of image sensors, can solve problems such as wiring parasitic capacitance and conversion gain reduction, and achieve the effect of reducing conversion gain, avoiding the formation of parasitic capacitance, and maintaining electrical connection performance

Pending Publication Date: 2022-07-15
GALAXYCORE SHANGHAI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, in the existing image sensors, the metal layer is set to be electrically connected to the floating diffusion region, the gate of the source follower transistor, and the source of the reset transistor, which is easy to form wiring parasitic capacitance, resulting in a decrease in conversion gain

Method used

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Embodiment Construction

[0026] As mentioned above, in the existing image sensor, taking the photoelectric conversion element plus 3 transistor structure as an example, the photoelectric conversion element can be directly connected to the floating diffusion area, and the photogenerated electrons generated in the photoelectric conversion element are stored in the floating diffusion area Under the timing control of the reset transistor and the row selection transistor, the photogenerated electrons are converted and output through the source follower transistor. However, in the existing image sensor, the metal layer is arranged to be electrically connected to the floating diffusion region, the gate of the source follower transistor, and the source of the reset transistor, which easily forms parasitic capacitance and reduces the conversion gain.

[0027] For details, please refer to figure 1 , figure 1 It is a schematic circuit diagram of a pixel unit of an image sensor in the prior art.

[0028] Specif...

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Abstract

An image sensor and an electronic information device, the image sensor including: a pixel region including a plurality of pixel units; each pixel unit comprises a photodiode region, a transmission transistor, a floating diffusion region, a source following transistor and a reset transistor; wherein the floating diffusion region is connected with the grid electrode of the source following transistor through a first tungsten structure, and the grid electrode of the source following transistor is connected with the source electrode of the reset transistor through a second tungsten structure. On the premise of keeping the electrical connection performance, the wiring stray capacitance of the floating diffusion region is reduced, and the performance of the image sensor is effectively improved.

Description

technical field [0001] The present invention relates to the technical field of image sensors, and in particular, to an image sensor and an electronic information device. Background technique [0002] Image sensors can be divided into complementary metal oxide (Complementary Metal Oxide Semiconductor, CMOS) image sensors and charge coupled device (Charge Coupled Device, CCD) image sensors, which are generally used to convert optical signals into corresponding electrical signals. The advantages of the CCD image sensor are high sensitivity to the image and low noise, but the integration of the CCD image sensor with other devices is difficult, and the power consumption of the CCD image sensor is high. In contrast, CMOS image sensors have the advantages of simple process, easy integration with other devices, small size, light weight, low power consumption, and low cost. At present, CMOS image sensors have been widely used in still digital cameras, camera phones, digital video ca...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14612H01L27/14636H01L27/14643H01L27/14689
Inventor 李杰
Owner GALAXYCORE SHANGHAI